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首页> 外文会议>Progress in High-Temperature Superconducting Transistors and Other Devices II >High-resolution patterning of thin HTSC films: evaluation of lithography and dry etching
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High-resolution patterning of thin HTSC films: evaluation of lithography and dry etching

机译：高分辨率HTSC薄膜的高分辨率图案化：光刻和干法蚀刻的评估

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Abstract: Device applications of HTSC films require a precise fine line patterning process. Pattern transfer starts with lithography, followed by a dry etch procedure and ends with the removal of the mask. UV-, x-ray, and e-beam lithography is compared with respect to the handling of the small samples of about 10 $MUL 10 $MUL 0.9 mm used nowadays and with respect to the pattern fidelity. Single- and multi-layer resist structures with linewidths down to 100 nm are used to study the etching of YBa$-2$/Cu$-3$/O$- 7$MIN@x$/ films in different etching equipments (RIE, RIBE). Physical sputtering is the dominant mechanism for the removal of these films. The electrical properties of micron and submicron structures prepared with several testmasks are examined.!16
机译：摘要：HTSC膜的器件应用需要精确的细线构图工艺。图案转移从光刻开始，然后进行干法蚀刻，最后去除掩模。将紫外线，X射线和电子束光刻与当今使用的约10 MMUL $ 10 MMUL 0.9毫米的小样品的处理以及图案保真度进行比较。使用线宽低至100 nm的单层和多层抗蚀剂结构研究在不同蚀刻设备中对YBa $ -2 $ / Cu $ -3 $ / Cu $ -3 $ / O $ -7 $ MIN @ x $ /膜的蚀刻（RIE ，RIBE）。物理溅射是去除这些膜的主要机制。检查了用几个测试掩模制备的微米和亚微米结构的电学性质！16

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