• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV >Highly ordered Ga(As)Sb quantum dots grown on pre-structured GaAs
【24h】

Highly ordered Ga(As)Sb quantum dots grown on pre-structured GaAs

机译：在预先构造的GaAs上生长的高序Ga（As）Sb量子点

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Ga(Sb)As quantum dots (QDs) are usually grown on plane GaAs substrates by self-organization in the Stranski-Krastanov mode. Here we report on Ga(As)Sb QD growth on a pre-structured GaAs substrate to achieve highly ordered QDs. The structure consists of a two-dimensional array of holes/troughs milled into the substrate (wafer with initial epitaxial buffer layer) with a gallium focused ion beam (Ga-FIB). Thus, the area density of the QDs can be controled. For exact positioning of the QDs in the milled holes it is important that the diameter of the dots equals the diameter of the milled holes. In a previous publication we have shown that we are able to change the diameter as well as the height of the QDs by controlled variation of growth temperature, Ga/Sb ratio, and nominal coverage. The diameter and depth of the milled holes as well as their separation are varied. Also, different milling techniques are examined to optimize milling time and procedure. The pre-structured GaAs substrate is overgrown in a second molecular-beam-epitaxial (MBE) step, first with another thin GaAs buffer layer, then with a QD layer. With the optimum of the milling and growth parameter sets the diameter of the QDs equals the size of the milled holes and the QDs can be grown highly ordered in the given pre-structured array. To the best of our knowledge this is the first report about exact positioning of Ga(As)Sb QDs on GaAs.
机译：Ga（Sb）As量子点（QD）通常通过Stranski-Krastanov模式下的自组织在平面GaAs衬底上生长。在这里，我们报告了在预先构造的GaAs衬底上实现高阶QD的Ga（As）Sb QD生长。该结构由带有镓聚焦离子束（Ga-FIB）的基板（带有初始外延缓冲层的晶圆）铣削的孔/槽的二维阵列组成。因此，可以控制QD的面积密度。为了将QD精确定位在铣削孔中，重要的是，点的直径等于铣削孔的直径。在以前的出版物中，我们已经表明，通过控制生长温度，Ga / Sb比和标称覆盖率的变化，我们能够改变QD的直径和高度。铣削孔的直径和深度及其间距是变化的。同样，研究了不同的研磨技术以优化研磨时间和过程。预结构化的GaAs衬底在第二个分子束外延（MBE）步骤中过分生长，首先覆盖另一个薄的GaAs缓冲层，然后覆盖QD层。通过最佳的铣削和生长参数设置，QD的直径等于铣削孔的大小，并且可以在给定的预构造阵列中高度有序地生长QD。据我们所知，这是关于Ga（As）Sb QD在GaAs上的精确定位的第一份报告。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号