Polar and Semipolar Ill-Nitrides for long wavelength intersubband devices

机译：极性和半极性不适氮化物，用于长波长子带间设备

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Extending the intersubband transitions in Ill-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar and semipolar AlGaN/GaN technologies for this relevant spectral range.

机译：将III族氮化物纳米结构中的子带间过渡从近红外扩展到更长波长，可能会对成像，遥感和地雷探测等关键应用产生重大影响。在这项工作中，我们分析了在相关光谱范围内极性和半极性AlGaN / GaN技术的潜力。

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《Quantum sensing and nanophotonic devices VII》|2010年|P.76081G.1-76081G.6|共6页
会议地点 San Francisco CA(US)
作者
E. Monroy; rnP. K. Kandaswamy; rnH. Machhadani; rnA. Wirthmueller; rnS. Sakr; rnL. Lahourcade; A. Das; rnM. Tchernycheva; rnP. Ruterana; rnF. H. Julien;
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CEA-CNRS group ? Nanophysique et semiconducteurs ?, INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France;

rnCEA-CNRS group ? Nanophysique et semiconducteurs ?, INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France;

rnInstitut d'Electronique Fondamentale, CNRS-Universite Paris-Sud, 91405 Orsay cedex, France;

rnCEA-CNRS group ? Nanophysique et semiconducteurs ?, INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France;

rnInstitut d'Electronique Fondamentale, CNRS-Universite Paris-Sud, 91405 Orsay cedex, France;

rnCEA-CNRS group ? Nanophysique et semiconducteurs ?, INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble cedex 9, France;

rnCEA-CNRS group ? Nanophysique et semiconducteurs ?, INAC/SP2M/NPSC, CEA-Gr;

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原文格式 PDF
正文语种 eng
中图分类 TP212;
关键词
nitrides; intersubband; infrared; quantum well; superlattices;

机译：氮化物子带间红外线;量子阱超晶格;

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专利

1. Valence band states and polarized optical emission from nonpolar and semipolar Ill-nitride quantum well optoelectronic devices [J] . Yuji Zhao, Robert M. Farrell, Yuh-Renn Wu, Japanese journal of applied physics . 2014,第10期

机译：非极性和半极性III族氮化物量子阱光电器件的价带态和偏振光发射
2. Effect of active QW population on optical characteristics of polar, semipolar and nonpolar Ill-nitride light emitters [J] . Mikhail V Kisin, Chih-Li Chuang, Hussein S El-Ghoroury Semiconductor science and technology . 2012,第2期

机译：有源量子阱密度对极性，半极性和非极性III族氮化物发光体光学特性的影响
3. Intersubband gain and stimulated emission in long-wavelength(Λ=13 Μm) intersubband In(Ga)As-GaAs quantum-dotelectroluminescent devices [J] . Krishna S., Bhattacharya P., Singh J., IEEE Journal of Quantum Electronics . 2001,第8期

机译：长波长（Λ= 13μm）子带间In（Ga）As-GaAs量子点电致发光器件的子带间增益和受激发射
4. Polar and Semipolar III-Nitrides for long wavelength intersubband devices [C] . E. Monroy, P. K. Kandaswamy, H. Machhadani, SPIE Conference on Quantum Sensing and Nanophotonic Devices . 2010

机译：用于长波长的极性和半极性III-氮化物
5. Polar and Nonpolar III-Nitride Heterostructures for Near-Infrared Intersubband Materials and Devices [D] . Shirazi-Hosseini-Dokht, Mohammad Ali. 2018

机译：用于近红外子带间材料和器件的极性和非极性III型氮化物异质结构
6. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication [O] . Geetika Khurana, Nitu Kumar, Manish Chhowalla, -1

机译：具有金纳米粒子的氧化石墨烯器件中的非极性和互补电阻切换特性：器件制造的多种方法
7. Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum well [O] . Machhadani, Houssaine, Beeler, M, Sakr, S, 2013

机译：极性和半极性GaN / AlN量子阱的近红外子带吸收的系统研究

Polar and Semipolar Ill-Nitrides for long wavelength intersubband devices

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