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High Power Switching Devices: Past, Present and Future

机译：大功率开关设备：过去，现在和未来

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摘要

Switching devices are key components in any power electronic circuit or system as they control and limit the flow of power from the source to the load. Their power level requirements (current & voltage) and switching frequency are continually increasing in the power electronic industry, and this demands larger and faster switching devices. This paper will focus on the development of high power switching devices and will present an up to date perspective of switching device technology and materials. The most important material has been and still is silicon (Si) for solid-state semiconductor devices. It dominates the world market at present, particularly in its crystalline form. However, silicon power device operation is generally limited to relatively low frequency and temperature.rnSilicon Carbide, Gallium Nitride and Diamond offer the potential to overcome the frequency, temperature and power management limitations of silicon. A large number of new concepts and materials are still in the research stage. At present, Silicon Carbide is considered to have the best trade-off between material properties and commercial maturity. Multilayer Silicon Carbide (SiC) power semiconductor devices being in development are promising devices for the near future, but long term reliability, crystal degradation and forward voltage drift problems need to be solved before commercialisation.
机译：开关设备是任何电力电子电路或系统中的关键组件，因为它们控制并限制了从电源到负载的电流。在电力电子行业中，它们的功率水平要求（电流和电压）和开关频率不断提高，因此需要更大，更快的开关器件。本文将重点研究大功率开关器件的发展，并提出开关器件技术和材料的最新观点。对于固态半导体器件，最重要的材料一直是并且仍然是硅（Si）。它目前在世界市场上占主导地位，尤其是其晶体形式。但是，硅功率器件的工作通常限于相对较低的频率和温度。碳化硅，氮化镓和金刚石具有克服硅的频率，温度和功率管理限制的潜力。大量新概念和新材料仍处于研究阶段。目前，碳化硅被认为是在材料性能和商业成熟度之间取得最佳折衷的选择。正在开发的多层碳化硅（SiC）功率半导体器件在不久的将来是很有前途的器件，但是长期的可靠性，晶体退化和正向电压漂移问题需要在商业化之前解决。

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