首页> 外文会议>Requirements Engineering (RE 2007) >Channel-width effect on hot-carrier degradation in nMOSFETs withrecessed-LOCOS isolation structures

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Channel-width effect on hot-carrier degradation in nMOSFETs withrecessed-LOCOS isolation structures

机译：带有LOCOS隔离结构的nMOSFET的沟道宽度对热载流子退化的影响

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Narrow-channel nMOSFETs with recessed LOCOS (R-LOCOS) isolationnstructures exhibit less hot-carrier-induced degradation thannwide-channel nMOSFETs, but the degradation mechanism of both devices isnthe same. This new finding is explained by the fact that in deepnsub-μm MOSFETs with ultra-thin gate oxides and a relatively thinnfield oxide, the dominant factor deciding the degradation behaviour innnarrow channel and wide channel devices is the vertical electric fieldneffect rather than the mechanical stress effect

机译：具有凹陷LOCOS（R-LOCOS）隔离结构的窄通道nMOSFET与宽通道nMOSFET相比，具有较少的热载流子引起的退化，但是两种器件的退化机理是相同的。在具有超薄栅极氧化物和相对较薄场氧化物的深亚微米MOSFET中，决定窄沟道器件和宽沟道器件性能下降的主要因素是垂直电场效应而不是机械应力效应，这一事实解释了这一新发现。

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来源
《Requirements Engineering (RE 2007)》|2007年|p.94-98|共5页
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作者
Yue J.M.P.; Chim W.K.; Cho B.J.; Chan D.S.H.; Qin W.H.; Kim Y.B.; Jang S.A.; Yeo I.S.;
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Centre for Integrated Circuit Failure Analysis Reliability, Nat. Univ. of Singapore;

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原文格式 PDF
正文语种 eng
中图分类自动化技术、计算机技术;
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4. Channel-width effect on hot-carrier degradation in nMOSFETs with recessed-LOCOS isolation structures [C] . Yue, J.M.P., Chim, . 1999

机译：沟道宽度对具有凹陷LOCOS隔离结构的nMOSFET中热载流子退化的影响
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Channel-width effect on hot-carrier degradation in nMOSFETs withrecessed-LOCOS isolation structures

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