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Monte Carlo simulation of electromigration in polycrystalline metalstripes

机译:多晶金属 nstripes中电迁移的蒙特卡洛模拟

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We have developed a Monte Carlo simulator of the electromigrationnprocess in polycrystalline metal stripes. Stripes with different averagengrain size can be generated with Voronoi tasselation, and mapped on to annetwork of resistors. The proposed model includes the major role playednby grain boundaries and by the current density redistribution within thenstripe following void formation. Simulations of stripes with differentngrain sizes and different widths are shown, and a few expressions fornthe failure probability are compared on the basis of their capability ofnreproducing the experimental results. In addition, electromigrationnnoise has been computed, recovering the characteristic 1/fγn(γ≈2) behavior. The substantial qualitative agreementnbetween our calculations and the experimental results is a convincingntest of the capability of the model proposed to include the relevantnphysics
机译:我们已经开发了多晶金属条中电迁移过程的蒙特卡罗模拟器。可以用Voronoi度量生成具有不同平均粒度的条带,并将其映射到电阻器网络上。所提出的模型包括晶界和空隙形成后的条带中的电流密度重新分布所起的主要作用。给出了具有不同粒度和不同宽度的条纹的模拟,并基于其再现实验结果的能力比较了失效概率的一些表达式。另外,已经计算出电迁移噪声,恢复了特征1 / f γn(γ≈ 2)的行为。我们的计算与实验结果之间的实质性定性一致,证明了该模型包含相关物理原理的能力令人信服。

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