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A Wet Clean Enabling Plasma Strip Process for Cu/Low-k Technology

机译：用于Cu / Low-k技术的湿法清洁等离子剥离工艺

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摘要

A patented He:H_2 plasma process has been developed in a downstream microwave plasma dry strip tool to meet the requirements for photoresist stripping over dense and porous low-k dielectric materials for Back-End-Of-Line Cu/low-k applications. Test results have revealed that the He:H_2 plasma isotropic strip process substantially minimizes the damages to dielectric materials as compared to other plasma chemistries and it enables post-strip wet cleans. In this paper, comprehensive process characterization data obtained on blanket wafers are first presented and discussed. These data include photoresist strip rate, low-k film thickness loss and refractive index change, strip selectivity, k-value shift, FTIR spectra, as well as TDS and SIMS analysis results. SEM inspection results obtained on patterned wafers show the cleanliness, good profile and CD retention of the structures after the He:H_2 plasma strip and subsequent wet cleans. Electrical testing and reliability data in evaluating the device performance are also presented. In addition the effectiveness of the He:H_2 plasma process on copper surface cleaning is discussed.
机译：已在下游微波等离子体干法剥离工具中开发了获得专利的He：H_2等离子体工艺，以满足在后端Cu / low-k应用中在致密和多孔的低k介电材料上剥离光致抗蚀剂的要求。测试结果表明，与其他等离子体化学方法相比，He：H_2等离子各向同性剥离工艺可将对介电材料的损害降到最低，并且可以进行带后湿法清洗。在本文中，首先介绍并讨论了在橡皮布上获得的全面的工艺表征数据。这些数据包括光刻胶剥离速率，低k膜厚度损失和折射率变化，剥离选择性，k值偏移，FTIR光谱以及TDS和SIMS分析结果。在有图案的晶片上获得的SEM检查结果表明，在He：H_2等离子剥离和随后的湿法清洁之后，结构的清洁度，良好轮廓和CD保留。还介绍了用于评估设备性能的电气测试和可靠性数据。此外，还讨论了He：H_2等离子体工艺对铜表面清洁的有效性。

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