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Nanoimprint Lithography - A Next Generation High Volume Lithography Technique

机译：纳米压印光刻-下一代大体积光刻技术

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摘要

Nanoimprint Lithography has been demonstrated to be one of the most promising next generation techniques for large-area structure replication in the nanometer scale. This fast and low cost method becomes an increasingly important instrument for fabrication of biochemistry, μ-fluidic, μ-TAS and telecommunication devices, as well as for a wide variety of fields in the nm range, like biomedical, nano-fluidics, nano-optical applications, data storage, etc. Due to the restrictions on wavelength and the enormous development works, linked to high process and equipment costs on standard lithography systems, nanoimprint lithography might become a real competitive method in mainstream IC industry. There are no physical limitations encountered with imprinting techniques for much smaller replicated structures, down to the sub-10nm range [1]. Among several Nanoimprint lithography techniques results of two promising methods, hot embossing lithography (HEL) and UV-nanoimprinting (UV-NIL) will be presented. Both techniques allow rapid prototyping as well as high volume production of fully patterned substrates for a wide range of materials. This paper will present results on HE and UV-NIL, among them full wafer imprints up to 200mm with high-resolution patterns down to nm range.
机译：纳米压印光刻技术已被证明是用于纳米尺度大面积结构复制的最有前途的下一代技术之一。这种快速，低成本的方法已成为越来越重要的工具，可用于制造生物化学，μ-流体，μ-TAS和电信设备，以及用于nm范围的各种领域，例如生物医学，纳米流体，纳米技术。由于波长的限制和巨大的开发工作，以及与标准光刻系统的高工艺和设备成本相关的因素，纳米压印光刻技术可能会成为主流IC行业中一种真正的竞争方法。对于较小的复制结构（低至10nm以下的范围），压印技术没有遇到物理限制[1]。在几种纳米压印光刻技术中，将介绍两种有前途的方法的结果，即热压印光刻（HEL）和UV-纳米压印（UV-NIL）。两种技术都可以快速原型化，并可以大量生产用于各种材料的完全图案化的基板。本文将介绍HE和UV-NIL的测试结果，其中包括完整的晶圆刻印，最大200mm的刻印以及低至nm范围的高分辨率图案。

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