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首页> 外文会议>The Seventh International Symposium on Diamond Materials was Held at the 200th Meeting of the Electrochemical Society, Jointly with the 52nd Meeting of the International Society of Electrochemistry, Sep 2-7, 2001, San Francisco, California >CVD Diamond for High Power and High Temperature Electronics
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CVD Diamond for High Power and High Temperature Electronics

机译：用于大功率和高温电子设备的CVD金刚石

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Polycrystalline diamond films produced by Microwave Plasma Enhanced Chemical Vapor Deposition (MWCVD) were investigated for use as dielectric materials for high power and high temperature passive devices. Film thicknesses ranged from 0.5 to 100μm and diamond grain sizes were <1 to 30μm depending on thickness. Capacitance and dielectric loss of metal-diamond-metal capacitors were measured as a function of frequency to 10~6Hz, and as a function of temperature from 25℃ to 250℃. Breakdown strength, resistivity and I-V characteristics were also measured. CVD diamond films that were heat treated to 325℃ for 2hrs., having Si+W+Au contacts, had very steady dielectric constants, ranging from 5 to 6.5, and very low losses, less than 0.005, over 100 to 10~6Hz at room temperature. Dielectric constants of CVD diamond varied by less than 3% with temperature cycling to 250℃. Losses remained very low (less than 0.01) and stable up to 200℃. By 250℃, the dielectric loss had increased to nearly 8X (0.023) its room temperature value (0.003). The effective breakdown strengths of CVD diamond ranged from 2 to 10MV/cm and resistivities ranged from 10~(13) to 10~(15)Ω-cm.
机译：研究了通过微波等离子体增强化学气相沉积（MWCVD）生产的多晶金刚石薄膜，用作高功率和高温无源器件的介电材料。膜厚度范围从0.5到100μm，金刚石晶粒尺寸小于1到30μm（取决于厚度）。测量了金属-金刚石-金属电容器的电容和介电损耗，它与频率在10〜6Hz之间的函数以及温度在25℃至250℃之间的函数有关。还测量了击穿强度，电阻率和IV特性。具有Si + W + Au触点的热处理至325℃2小时的CVD金刚石膜具有非常稳定的介电常数，范围从5到6.5，并且在100到10〜6Hz时损耗非常小，小于0.005。室内温度。 CVD金刚石的介电常数随温度循环至250℃的变化小于3％。损耗仍然很低（小于0.01），并在200℃时稳定。到250℃时，介电损耗已增加到其室温值（0.003）的近8倍（0.023）。 CVD金刚石的有效击穿强度范围为2至10MV / cm，电阻率范围为10〜（13）至10〜（15）Ω-cm。

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