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首页> 外文会议>The Seventh International Symposium on Diamond Materials was Held at the 200th Meeting of the Electrochemical Society, Jointly with the 52nd Meeting of the International Society of Electrochemistry, Sep 2-7, 2001, San Francisco, California >HIGHLY EFFICIENT FIELD EMITTER USING CARBON NANOTUBES GROWN BY MICROWAVE PLASMA-ENAHNCED CVD
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HIGHLY EFFICIENT FIELD EMITTER USING CARBON NANOTUBES GROWN BY MICROWAVE PLASMA-ENAHNCED CVD

机译：微波等离子体增强CVD法生长的碳纳米管的高效场致发射体

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The discovery of carbon nanotubes (CNTs) in 1991 has spurred considerable interest in the study of their characteristics and potential applications in various fields. CNTs are ideal for electron field emission, capitalizing on their small tip radius of curvature. In this paper, measurement of field emission by CNTs with extremely low turn-on electric field is reported. The CNTs tested for field emission were grown by microwave plasma enhanced chemical vapor deposition (MPECVD). A thin film of transition metal palladium (Pd), acting as a catalytic center for nanocluster nucleation was sputter-deposited on Si, SiO_2/Si and Ti/Si substrates. The resulting CNTs were highly dense and randomly oriented but phase pure. The field emission tests indicated an extremely low turn-on field of ～ 0.3 V/μm for CNTs on Si substrate. The results demonstrate that randomly oriented CNTs synthesized by MPECVD method produce very good field emitters, comparable to those of vertically aligned CNTs.
机译：1991年，碳纳米管（CNTs）的发现引起了人们对碳纳米管的特性及其在各个领域中潜在应用的研究的浓厚兴趣。碳纳米管因其尖端的小曲率半径而非常适合用于电子场发射。在本文中，报道了使用极低的开启电场测量CNT的场发射的方法。通过微波等离子体增强化学气相沉积（MPECVD）生长测试了场发射的CNT。在Si，SiO_2 / Si和Ti / Si衬底上溅射沉积过渡金属钯（Pd）薄膜，该薄膜充当纳米团簇形核的催化中心。所得的CNT是高度致密的并且是随机取向的，但是是相纯的。场发射测试表明，Si衬底上的CNT的导通场极低，约为0.3 V /μm。结果表明，通过MPECVD方法合成的随机取向的CNT产生了非常好的场发射体，与垂直排列的CNT相当。

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