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X-ray double crystal and x-ray topographic characterization of structure, strain and defects in SiC thin films on Si and AlN/Al_2O_3 substrates

机译：Si和AlN / Al_2O_3衬底上SiC薄膜的结构，应变和缺陷的X射线双晶和X射线形貌表征

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The structure, strain and defects in epitaxial SiC thin films grown on Si and AIN/Al_2O_3 substrates are analyzed and compared by using the x-ray double crystal diffractometry and x-ray top graphic techniques. SiC thin films are found to be single crystals with a cubic s. ucture when grown on Si and a hexagonal 6H type structure when grown on AIN/Al_2O_3. The dislocation density and strain in SiC/AIN/Al_2O_3 are comparable to SiC/Si. The experimental stress agrees well with the theoretical one calcu ated from thermal expansion coefficient mismatch between the film anc the substrate. X-ray rocking curves and x-ray topographs suggest that the arrount of defects generated in the Si substrates during the thin film growth pro ess is much more than in the sapphire substrates.

机译：利用X射线双晶衍射法和X射线顶部图形技术，分析和比较了在Si和AIN / Al_2O_3衬底上生长的外延SiC薄膜的结构，应变和缺陷。 SiC薄膜是立方晶的单晶。在Si上生长时的组织结构，在AIN / Al_2O_3上生长时的六角形6H型结构。 SiC / AIN / Al_2O_3中的位错密度和应变与SiC / Si相当。实验应力与理论值非常吻合，该理论值是由薄膜与基材之间的热膨胀系数不匹配计算得出的。 X射线摇摆曲线和X射线形貌图表明，在薄膜生长过程中，硅衬底中产生的缺陷的影响远大于蓝宝石衬底。

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《Silicon carbide and related materials》|1993年|341-344|共4页
会议地点 Washington DC(US);Washington DC(US)
作者
J. Chaudhuri; R. Thokala; J.Chaudhuri; J. H. Edgar; B. Sywe;
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作者单位

Mechanical Engineering Department, Wichita State University, Wichita, KS 67208;

Mechanical Engineering Department, Wichita State University, Wichita, KS 67208;

Mechanical Engineering Department, Wichita State University, Wichita, KS 67208;

Dept. of Chemical Engineering, Kansas State University, Manhatten, KS 66506;

Dept. of Chemical Engineering, Kansas State University, Manhatten, KS 66506;

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原文格式 PDF
正文语种 eng
中图分类硅酸盐工业;无机质材料;
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1. Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films [J] . Dudley M, Bai J, Huang X, Materials science in semiconductor processing . 2006,第1a3期

机译：同步带隙白光X射线形貌，透射电子显微镜和高分辨率X射线衍射研究宽带隙半导体晶体和薄膜中的缺陷和应变松弛过程
2. Study Of Electronic Structures For Fe Thin Films Deposited On si- And C-faces Of 4h-sic Substrates By Soft x-ray Emission Spectroscopy [J] . M. Hirai, T. Wakita, H. Okazaki, Applied Surface Science . 2007,第1期

机译：用软X射线发射光谱研究4h-sic衬底的Si和C面上沉积的Fe薄膜的电子结构
3. Structural characterization of AlN thin film deposited on a single crystal of Al_2O_3 (0001) substrate [J] . K.H. Kim, C.H. Chang, Y.M. Koo Materials Letters . 1998,第1期

机译：沉积在Al_2O_3（0001）衬底单晶上的AlN薄膜的结构表征
4. X-ray double crystal and x-ray topographic characterization of structure, strain and defects in SiC thin films on Si and AlN/Al_2O_3 substrates [C] . International conference on SiC and related materials . 1994

机译：Si和Aln / Al_2O_3基板上的结构，应变和缺陷的X射线双晶和X射线地形表征
5. Determination via luminescence spectroscopy and x-ray diffraction of the strain and composition of GaN and Al(x)Ga(1-x)N thin films grown on 6H-SiC(0001) substrates. [D] . Perry, William George. 1997

机译：通过发光光谱和X射线衍射测定在6H-SiC（0001）衬底上生长的GaN和Al（x）Ga（1-x）N薄膜的应变和组成。
6. Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC [O] . Andreea Bianca Serban, Vladimir Lucian Ene, Doru Dinescu, 2021

机译：在（111）3C-SIC上生长的外延ALN / GAN薄膜缺陷结构研究
7. Investigations of AlN thin film crystalline properties in a wide temperature range by in situ x-ray diffraction measurements: Correlation with AlN/sapphire-based SAW structure performance [O] . Keltouma Aït Aïssa, Omar Elmazria, Pascal Boulet, 2015

机译：通过原位X射线衍射测量来研究AlN薄膜结晶性能的宽温度范围：与基于ALN / Sapphire的SAW结构性能的相关性
8. Characterization of Defect Structures in Lely 6H-SiC Single Crystals usingSynchrotron White Beam X-Ray Topography [R] . Huang, W., Wang, S., Dudley, M., 1995

机译：使用异步加速器白光束X射线形貌表征Lely 6H-siC单晶中的缺陷结构

X-ray double crystal and x-ray topographic characterization of structure, strain and defects in SiC thin films on Si and AlN/Al_2O_3 substrates

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