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Site-specific and High-spatial-resolution Scanning Spreading Resistance Microscopy and Its Applications in Si Technology

机译:特定位置和高空间分辨率扫描扩展电阻显微镜及其在硅技术中的应用

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摘要

Scanning spreading resistance microscopy (SSRM) is a powerful technique for 2D-carrier profiling of scaled silicon devices, with its wide dynamic range of carrier concentration and high spatial resolution. We achieved the 1-nm high spatial resolution of SSRM in carrier profiling by decreasing the contact resistance between sample and probe while measuring in a high vacuum. In this paper, we demonstrate SSRM applications to Si devices. Direct observation of (110)/(100) CMOSFETs clarified significant differences between pMOSs and nMOSs on (110)/(100) Si substrates. Furthermore, our sample-making breakthrough enables site-specific SSRM characterization within 60 nm ultra thin samples and therefore failure analysis of real SRAM devices, showing the high potential of SSRM technology for further device scaling.
机译:扫描扩展电阻显微镜(SSRM)是一种用于缩放硅器件2D载流子轮廓分析的强大技术,它具有宽的载流子浓度动态范围和高空间分辨率。在高真空下进行测量时,通过降低样品与探针之间的接触电阻,我们实现了载流子分析中SSRM的1nm高空间分辨率。在本文中,我们演示了SSRM在Si器件上的应用。对(110)/(100)CMOSFET的直接观察表明,在(110)/(100)Si衬底上pMOS和nMOS之间存在显着差异。此外,我们的样品制造突破性技术可在60 nm超薄样品中表征特定位置的SSRM,从而对真实SRAM器件进行故障分析,从而显示出SSRM技术在进一步扩展器件方面的巨大潜力。

著录项

  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    L. Zhang; M. Koike; S. Takeno;

  • 作者单位

    Advanced LSI Technology Laboratory, Corporate Research Development Center, Toshiba Corporation 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan;

    Advanced LSI Technology Laboratory, Corporate Research Development Center, Toshiba Corporation 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan;

    Advanced LSI Technology Laboratory, Corporate Research Development Center, Toshiba Corporation 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
  • 关键词

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