• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications >Fabrication and Electrical Characterization of High-k LaGdO_3 Thin Films and Field Effect Transistors
【24h】

Fabrication and Electrical Characterization of High-k LaGdO_3 Thin Films and Field Effect Transistors

机译：高k LaGdO_3薄膜和场效应晶体管的制备和电学表征

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The electrical properties of LaGdO_3 (LGO) high-k dielectric thin films prepared by pulsed laser deposition (PLD) on SiOx/p-Si substrate have been studied. The equivalent oxide thickness (EOT) and gate leakage current density (Jg) were determined on metal-oxide-semiconductor (MOS) structures. Capacitance-Voltage characteristics showed negligible hysteresis, ~8 mV. The extracted dielectric constant (k) of LGO layer from the EOT-physical thickness plot was -21.6 ± 1.7. LGO layers with EOT of 3nm had a J_g ~ 3 × 10~-8 A/cm2 at accumulation (V_g=V_FB-l)- The estimated interfacial trap density at the flat band voltage was in the range 1012 eV~-1cm~-2. Long n-channel LGO metal-oxide-semiconductor field effect transistors (MOSFET) with 7.5um channel length and a channel width of 15 μm have been fabricated and electrically characterized. The threshold voltage (V,) was -0.8V and the transconductance (g_m) was 44.7μS.
机译：研究了在SiOx / p-Si衬底上通过脉冲激光沉积（PLD）制备的LaGdO_3（LGO）高k介电薄膜的电学性质。在金属氧化物半导体（MOS）结构上确定等效氧化物厚度（EOT）和栅极泄漏电流密度（Jg）。电容-电压特性显示可忽略的迟滞，约为8 mV。从EOT物理厚度图中提取的LGO层的介电常数（k）为-21.6±1.7。 EOT为3nm的LGO层在累积时的J_g〜3×10〜-8 A / cm2（V_g = V_FB-1）-在平带电压下估计的界面陷阱密度在1012 eV〜-1cm〜-范围内2。制作了具有7.5um沟道长度和15μm沟道宽度的长n沟道LGO金属氧化物半导体场效应晶体管（MOSFET）并进行了电学表征。阈值电压（V，）为-0.8V，跨导（g_m）为44.7μS。

著录项

  • 来源
  • 会议地点 Montreal(CA);Montreal(CA)
  • 作者

    S.P. Pavunny; R. Thomas; T.S. Kalkur; J. Schubert; E.Fachini; R.S. Katiyar;

  • 作者单位

    Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA;

    Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA;

    Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, 80918, USA;

    Institute of Bio-and Nano-Systems (IBN1-IT) and JARA-Fundamentals of Future Information Technology, Research Centre Jtilich, D-52425, Germany;

    Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA;

    Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, PR 00936-8377, USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号