Si CMOS Contacts to II1-V Materials for Monolithic Integration of III-V and Si Devices

机译：用于III-V和Si器件单片集成的II1-V材料的Si CMOS触点

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Si CMOS-based contact metallurgies to III-V compounds will allow parallel interconnection of Si CMOS and III-V devices and promote monolithic integration. In this study, we report the use of nickel silicides to contact n++ GaAs encapsulated with n++ Si. The structure and electrical properties of contacts with varying reaction depths is correlated. Specific contact resistivities lower than 5e-7 ohm-cm2 are measured on NiSi/Si/GaAs structures.

机译：基于Si CMOS的III-V化合物接触冶金将允许Si CMOS和III-V器件并行互连，并促进单片集成。在这项研究中，我们报告了使用硅化镍来接触封装有n ++ Si的n ++ GaAs。具有不同反应深度的触点的结构和电性能是相关的。在NiSi / Si / GaAs结构上测得的比接触电阻率低于5e-7 ohm-cm2。

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《Silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications》|2011年|p.225-229|共5页
会议地点 Montreal(CA);Montreal(CA)
作者
N. Y. Pacella; M. T. Bulsara; E. A. Fitzgerald;
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Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA;

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原文格式 PDF
正文语种 eng
中图分类材料;
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1. Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices [J] . D.Z. Chi, R.T.P. Lee, A.S.W. Wong Thin Solid Films . 2007,第22期

机译：解决纳米级CMOS器件中NiSi硅化物接触金属化的材料和集成问题
2. Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials [J] . Nan Y. Pacella, Kunal Mukherjee, Mayank T. Bulsara ECS Journal of Solid State Science and Technology . 2013,第7期

机译：用于接触III-V化合物材料的硅CMOS欧姆接触技术
3. Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems [J] . Thomas E. Kazior Philosophical transactions of the Royal Society. Mathematical, physical, and engineering sciences . 2014,第2012期

机译：超越CMOS：III-V器件，RF MEMS和其他异种材料/器件与Si CMOS的异构集成，以创建智能微系统
4. Si CMOS Contacts to III-V Materials for Monolithic Integration of III-V and Si Devices [C] . N. Y. Pacella, M. T. Bulsara, E. A. Fitzgerald International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications . 2011

机译：SI CMOS与III-V材料的触点III-V和SI器件的单片集成
5. Non-Silicon CMOS Devices and Circuits on High Mobility Channel Materials: Germanium and III-V [D] . Wu, Heng. 2016

机译：高迁移渠道材料的非硅CMOS器件和电路：锗和III-V
6. Beyond CMOS: heterogeneous integration of III–V devices RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems [O] . Thomas E. Kazior -1

机译：超越CMOS：III-V器件RF MEMS和其他异种材料/器件与Si CMOS的异构集成以创建智能微系统
7. Wafer bonding for monolithic integration of Si CMOS VLSI electronics with III-V optoelectronic devices [O] . London Joanna M. 1974- 1999

机译：晶圆键合用于si CmOs VLsI电子器件与III-V光电器件的单片集成

Si CMOS Contacts to II1-V Materials for Monolithic Integration of III-V and Si Devices

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