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High Rate Copper Isotropic Wet Chemical Etching

机译：高速率各向同性铜湿法化学蚀刻

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A high-rate copper isotropic wet-etching process has been developed. The process is found to be surface-kinetic controlled, so the etching rate within the isolated feature does not increase upon removal of all metal from the field, as well as remains flat and uniform across individual feature and across an array of features, independent of feature size. Also discussed are some of the issues and means of implementing this low cost but inherently-unstable peroxide/alkaline etching solution, as well as some general chemical-variant behavior trends of the amine based etching chemistry. Combining a straightforward, robust 300 mm spin-spray reactor design with optimized chemical formulations and process conditions enabled a tunable removal-profile that can be tailored to match the copper plating profile. Copper removal rates of >1.5 um/min, WIW removal-rate variability <1.5% (full range, 2 mm edge exclusion), post-etch mirror like-surfaces, reflectivity rates of change of < 2% per 5 urn of removal, and a wafer to wafer rate and uniformity variability of less than 2% have been implemented.
机译：已经开发出一种高速率的各向同性铜湿法刻蚀工艺。发现该过程是表面动力学控制的，因此，从场中除去所有金属后，孤立特征内的蚀刻速率不会增加，并且在各个特征和一系列特征之间保持平坦且均匀，与功能大小。还讨论了实现这种低成本但本质上不稳定的过氧化物/碱性蚀刻溶液的一些问题和方法，以及基于胺的蚀刻化学的一些一般化学变化行为趋势。将简单，坚固的300 mm旋转喷涂反应器设计与优化的化学配方和工艺条件相结合，可以实现可调整的去除轮廓，可以针对铜镀层轮廓进行定制。铜去除率> 1.5 um / min，WIW去除率变化率<1.5％（全范围，边缘排除2 mm），蚀刻后镜面类似，每5去除率的反射率变化率小于2％，晶圆与晶圆之间的比率和均匀性差异均小于2％。

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