Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT

机译：高掺杂亚微米HEMT蒙特卡罗粒子模拟中空间变异简并的有效建模

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An efficient technique has been developed and applied to incorporate the spatially dependent influence of the Pauli exclusion principle in modeling the scattering processes in a two-dimensional Monte Carlo Device Simulator. The degeneracy effects on the performance of highly doped InP-based High Electron Mobility Transistors are investigated. It is found tha.t degeneracy significantly affects the behavior of carriers not only in the channel but also in the contact regions what strongly influences device characteristics like I-V curves and transconductance.

机译：已经开发出一种有效的技术，并将其用于在二维蒙特卡洛设备模拟器中对散射过程进行建模时，结合保利排除原理的空间相关影响。研究了简并性对高掺杂InP基高电子迁移率晶体管性能的影响。发现简并性不仅显着影响载流子在沟道中的行为，而且显着影响接触区域中的载子的行为，而载子的行为对器件特性（如I-V曲线和跨导）有很大影响。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|169-172|共5页
会议地点 Leuven(BE);Leuven(BE)
作者
M. Isler; D. Liebig; K. Schuenemann;
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Arbeitsbereich Hochfrequenztechnik, Tech. Univ. Hamburg-Harburg D-21071 Hamburg, Germany;

Arbeitsbereich Hochfrequenztechnik, Tech. Univ. Hamburg-Harburg D-21071 Hamburg, Germany;

Arbeitsbereich Hochfrequenztechnik, Tech. Univ. Hamburg-Harburg D-21071 Hamburg, Germany;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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4. Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT [C] . M. Isler, D. Liebig, K. Schunemann International conference on simulation of semiconductor devices and processes . 1998

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Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT

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