New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model

机译：使用两种接口状态模型的MOSFET器件新的热载流子降解机制

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We have studied the characteristics of MOSFET degradation induced by hot-carriers. When the characteristics of drain current degradation (ΔI_d) are applied to the stress time(t) dependence ΔI_d ∝ t~n, the exponent n is clearly different under different bias conditions. We present a two-type interface-state model composed of deep-energy interface states and shallow-energy interface states which have a different n exponent in order to explain the characteristics of drain current degradation.

机译：我们已经研究了热载流子引起的MOSFET退化的特性。当将漏极电流衰减特性（ΔI_d）应用于应力时间（t）依赖性ΔI_d∝ t〜n时，指数n在不同偏置条件下明显不同。为了解释漏极电流退化的特征，我们提出了一种由深能界面态和浅能界面态组成的两种界面态模型，它们具有不同的n指数。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|231-234|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
M. Yamaji; T. Itakura;
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Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan;

Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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专利

1. Hot-carrier current modeling and device degradation in surface-channel p-MOSFETs [J] . Ong T.-C., Ko P.-K. IEEE Transactions on Electron Devices . 1990,第7期

机译：表面沟道p-MOSFET中的热载流子建模和器件退化
2. Investigation of Hot-Carrier Degradation in 0.18- μ m MOSFETs for the Evaluation of Device Lifetime and Digital Circuit Performance [J] . Gupta Anshul, Gupta Charu, Jatana H. S., IEEE transactions on device and materials reliability . 2019,第4期

机译：0.18μMMOSFET中热载波降解的研究，用于评估装置寿命和数字电路性能
3. Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure [J] . Jeffrey Mun Pun Yue, Wai Kin Chim IEEE Electron Device Letters . 2000,第3期

机译：具有凹陷LOCOS隔离结构的窄沟道和宽沟道n-MOSFET中的热载流子退化机制
4. New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model [C] . M. Yamaji, T. Itakura International conference on simulation of semiconductor devices and processes . 1998

机译：使用双型接口状态模型的MOSFET器件新的热载波降低机制
5. Monte Carlo studies of hot-carrier degradation and device performance in low-power, deep submicron n-MOSFETs. [D] . Williams, Stewart Clark. 1999

机译：蒙特卡洛研究了低功率深亚微米n-MOSFET中的热载流子退化和器件性能。
6. Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms [O] . Guohe Zhang, Junhua Lai, Yali Su, 2019

机译：基于声子散射机理的超薄体FD SOI MOSFET导热特性研究
7. New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model [O] . M. Yamaji, T. Itakura 2015

机译：采用双类型界面态模型的mOsFET器件新型热载流子退化机制

New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model

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