Single Electron Memory Device Simulations

机译：单电子存储设备仿真

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The final target of single-electron memory (SEM) device is to realise high-density and fast non-volatile RAM (random access memory). In this talk the simulations are discussed based on experiments and achievable nano-technologies.

机译：单电子存储器（SEM）装置的最终目标是实现高密度和快速的非易失性RAM（随机存取存储器）。在本次演讲中，将基于实验和可实现的纳米技术讨论仿真。

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来源
《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|201-202|共2页
会议地点 Leuven(BE);Leuven(BE)
作者
K. Nakazato;
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作者单位

Hitachi Cambridge Laboratory Microelectronics Research Centre Cavendish Laboratory, Madingley Road Cambridge CB3 0HE, U.K.;

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原文格式 PDF
正文语种 eng
中图分类半导体器件制造工艺及设备;
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1. Comment on Memory Effect and Negative Differential Resistance by Electrode-Induced Two-Dimensional Single-Electron Tunneling in Molecular and Organic Electronic Devices [J] . H. S. Majumdar, J. K. Baral, A. Laiho, Advanced Materials . 2006,第21期

机译：分子和有机电子器件中电极诱导的二维单电子隧穿对记忆效应和负微分电阻的影响
2. Memory Effect and Negative Differential Resistance by Electrode-Induced Two-Dimensional Single-Electron Tunneling in Molecular and Organic Electronic Devices [J] . Wei Tang, Huazhong Shi, Gu Xu, Advanced Materials . 2005,第19期

机译：分子和有机电子器件中电极诱导的二维单电子隧穿的记忆效应和负微分电阻
3. Si memory device operated with a small number of electrons by using a single-electron-transistor detector [J] . Takahashi Y., Fujiwara A. Electronics Letters . 1998,第1期

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4. Future Memory Devices - from Stacked memory, Gain memory, Single-electron memory to Molecular memory [C] . Kazuo Nakazato International Symposium on VLSI Technology, Systems, and Applications . 2006

机译：未来的存储器设备 - 从堆叠的内存，增益存储器，单电子存储器到分子内存
5. Background charge insensitive single electron memory devices. [D] . Yadavalli, Kameshwar K. 2005

机译：背景电荷不敏感的单电子存储设备。
6. Modeling and simulation of electronic structure material interface and random doping in nano electronic devices [O] . Duan Chen, Guo-Wei Wei -1

机译：建模和电子结构材料界面和随机掺杂的仿真在纳米电子器件
7. Ab initio simulation of single dopant devices: electronic states and transport [O] . Moraru D, Kuzuya Y, Mizuno T, 2011

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8. Ultra High Speed Single Electron Memory Devices based on Carbon Nanotube Quantum Dots. [R] . Yang, E., Strauf, S., Fisher, F., 2011

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Single Electron Memory Device Simulations

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