Analysis of the asymmetric breakdown characteristics of trench isolation structure by using TCAD

机译：用TCAD分析沟槽隔离结构的非对称击穿特性。

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Experimentally observed asymmetric breakdown characteristics of shallow trench isolation arc investigated by using TCAD. Both transient enhanced diffusion of boron and phosphorus and dcactivation of phosphorus piled up at the trench bottom arc the main causes of the asymmetry. Several techniques which reduce the asymmetry are proposed and their effects are compared by using TCAD.

机译：使用TCAD研究了浅沟槽隔离电弧的实验观察到的不对称击穿特性。硼和磷的瞬态增强扩散以及沟槽底部堆积的磷的dc活化都是不对称性的主要原因。提出了几种减少不对称性的技术，并通过使用TCAD比较了它们的效果。

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《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|259-262|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
S. Kumashiro; H. Kawaguchi; K. Imai; H. Matsumoto;
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ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, JAPAN;

ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, JAPAN;

ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, JAPAN;

ULSI Device Development Laboratories, NEC Corporation 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, JAPAN;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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专利

1. Breakdown and hot carrier injection in deep trench isolation structures [J] . B. Elattari, P. Coppens, G. Van den bosch, Solid-State Electronics . 2005,第8期

机译：深沟槽隔离结构中的击穿和热载流子注入
2. Junction breakdown instabilities in deep trench isolation structures [J] . Tsang Y.L., Aitken J.M. IEEE Transactions on Electron Devices . 1991,第9期

机译：深沟槽隔离结构中的结击穿不稳定性
3. Nonuniform reverse-breakdown characteristics of n/sup +/-diodes fabricated by LOCOS and trench isolation [J] . Ohzone T., Iwata H. IEEE Transactions on Electron Devices . 1994,第12期

机译：LOCOS制作的n / sup +/-二极管的非均匀反向击穿特性和沟槽隔离
4. Analysis of the asymmetric breakdown characteristics of trench isolation structure by using TCAD [C] . S. Kumashiro, H. Kawaguchi, K. Imai, International conference on simulation of semiconductor devices and processes . 1998

机译：用TCAD分析沟槽隔离结构的不对称击穿特性
5. A novel trench lateral power MOSFET with high breakdown voltage and low on-resistance [D] . Fujishima, Naoto 1998

机译：具有高击穿电压和低导通电阻的新型沟槽横向功率MOSFET
6. Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations [O] . Chang-Fu Han, Jiun-Ming Chiou, Jen-Fin Lin 2020

机译：深沟槽隔离和倒金字塔结构用于通过仿真提高CMOS图像传感器中光电二极管的光学效率
7. Analysis of the asymmetric breakdown characteristics of trench isolation structure by using TCAD [O] . S. Kiimnshiro, H. Kawaguchi, K. Imai, 2015

机译：用TCaD分析沟槽隔离结构的不对称击穿特性

Analysis of the asymmetric breakdown characteristics of trench isolation structure by using TCAD

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