Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion

机译：点缺陷通过扩展缺陷的重组及其对掺杂扩散的影响

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The transient enhanced diffusion of dopants in silicon is known to be governed by the interaction of extended defects and intrinsic point defects. In this work we present calculations of the formation of extended defects and their interactions with point defects, based on ab-initio calculations of Gilmer, Caturla, and coworkers. Dissolution of the extended defects may occur either by diffusion of point defects to surfaces and interfaces, or by reactions in the bulk. The work presented here emphasizes especially the reaction of point defects with extended defects which is shown to be more effective than bulk recombination.

机译：已知掺杂剂在硅中的瞬态增强扩散受扩展缺陷和本征点缺陷的相互作用支配。在这项工作中，我们基于Gilmer，Caturla和同事的从头算起，提出了扩展缺陷的形成及其与点缺陷的相互作用的计算。扩展缺陷的溶解可能是由于点缺陷扩散到表面和界面上，也可能是由于本体中的反应。这里介绍的工作特别强调了点缺陷与扩展缺陷的反应，这种反应显示出比本体重组更有效。

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《Simulation of semiconductor processes and devices 1998(SISPAD98)》|1998年|360-363|共4页
会议地点 Leuven(BE);Leuven(BE)
作者
D. Stiebel; P. Pichler;
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作者单位

Fraunhofer-Institut fuer Integrierte Schaltungen, Bauelementetechnologie, Schottkystrasse 10, 91058 Erlangen, Germany;

Fraunhofer-Institut fuer Integrierte Schaltungen, Bauelementetechnologie, Schottkystrasse 10, 91058 Erlangen, Germany;

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正文语种 eng
中图分类半导体器件制造工艺及设备;
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1. Thermal evolution of extended defects in implanted Si: impact on dopant diffusion [J] . Alain Claverie, Benjamin Colombeau, Gerard Ben Assayag, Materials science in semiconductor processing . 2000,第4期

机译：注入硅中扩展缺陷的热演化：对掺杂扩散的影响
2. Important Features of Anomalous Single-Dopant Diffusion and Simultaneous Diffusion of Multi-Dopants and Point Defects in Semiconductors [J] . Dao Khac An Diffusion and Defect Data. Solid State Data, Part A. Defect and Diffusion Forum . 2007,第0期

机译：半导体中单掺杂扩散，多掺杂同时扩散和点缺陷的重要特征
3. Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers [J] . Patrik Ščajev, Alexander Usikov, Vitali Soukhoveev, Applied Physics Letters . 2011,第20期

机译：氢化物气相外延GaN层中扩展缺陷处的扩散受限非辐射复合
4. Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion [C] . D. Stiebel, P. Pichler International conference on simulation of semiconductor devices and processes . 1998

机译：通过延长的缺陷重组点缺陷及其对掺杂剂扩散的影响
5. Modeling defect mediated dopant diffusion in silicon. [D] . Puchala, Brian T. 2009

机译：模拟缺陷介导的硅中掺杂剂的扩散。
6. Defects Diffusion and Dopants in Li2Ti6O13: Atomistic Simulation Study [O] . Navaratnarajah Kuganathan, Sashikesh Ganeshalingam, Alexander Chroneos 2019

机译：Li2Ti6O13中的缺陷扩散和掺杂：原子模拟研究
7. Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion [O] . D. Stiobel, P. Pichler 2014

机译：扩展缺陷对点缺陷的重组及其对掺杂扩散的影响

Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion

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