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Efficient Quantum Correction Model for Multi-dimensional CMOS Simulations

机译:用于多维CMOS仿真的高效量子校正模型

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摘要

We present a new Quantum correction algorithm suitable for multi-dimensional CMOS simulations. The quantum effects are included using the Modified Local Density Approximation (MLDA). Physically accurate spatial distribution of quantized carriers can be predicted with only ten to twenty percents increased of computation time. The algorithm is also suitable to integrate into a device simulator. Simulation results are in good agreement with experimental data.
机译:我们提出了一种适用于多维CMOS仿真的新量子校正算法。使用修改的局部密度近似(MLDA)包括量子效应。可以预测量化载波的物理上准确的空间分布,而计算时间仅增加百分之十到百分之二十。该算法还适合集成到设备模拟器中。仿真结果与实验数据吻合良好。

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