• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Sixth International Conference on Progress of Machining Technology: With Some Topics in Advanced Manufacturing Technology (ICPMT'2002); Sep 10-14, 2002; Xi'an, China >STUDY OF THE SUB-SURFACE CHARACTERISTICS OF ELID-GROUND SINGLE CRYSTAL SILICON
【24h】

STUDY OF THE SUB-SURFACE CHARACTERISTICS OF ELID-GROUND SINGLE CRYSTAL SILICON

机译：地下单晶硅亚表面特征的研究

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Single crystal silicon, having many advanced physical and mechanical properties, is now widely used in the semiconductor industry (account for more than 90% of the semiconductor devices). Owing to the increasing demands on brittle materials such as advanced ceramics, glasses and single crystal silicon, researches on ductile-mode grinding and related cutting theories, material removal mechanism have attracted many researchers' attention. As a results, the traditional lapping, etching, polishing routine of making wafers is suggested by many researchers to be replaced by precision grinding and polishing if the requirements of flatness, TTV and roughness are to be fulfilled when producing 12"～16" wafers. In order to minimize the polishing works and the resulted deterioration of form accuracy, it is important to reduce the grinding induced surface/subsurface damage. It is well-known that the grit size of abrasive on the grinding wheel has profound effect on the obtained surface roughness. Generally speaking, the smaller the grit size, the better surface finish and the less damaged layer could be achieved. However, when abrasive gets smaller the wheel has bigger chance-to be loaded by swarf (chips). As a result, the wheel constantly needs to be redressed and the the process becomes impractical to be employed in the real production. The ELID (electrolytic in-process dressing) technique, developed by Ohmori, offers a way of in-process monitoring/dressing the grinding wheel which enables the wheei of ultra-fine abrasives to be used. In order to machine the 300mm～400mm silicon wafer to the specified surface roughness and flatness, ELID diamond grinding were employed in this study to investigate its feasibility. Cast iron fiber reinforced diamond wheels were used to grind silicon wafers and various ELID parameters were systematically tested to examine their influences on the grinding process. The results showed that, under the same grinding conditions, the obtained surfaces were characterized by (1) thick poly/amorphous layer with occasionally deep-penetrated cracks, (2)thick amorphous layer(up to 250nm) with distributed dislocation loops(～300nm into the substrate), and (3)thin amorphous layer (up to 30nm) when (1) no ELID, (2) ELID with rather low peak voltage and current and (3) ELID with high peak voltage and current were applied in the grinding processes.
机译：具有许多先进的物理和机械性能的单晶硅现在被广泛用于半导体工业（占半导体器件的90％以上）。由于对脆性材料如高级陶瓷，玻璃和单晶硅的需求不断增长，对延性磨削和相关切削理论的研究，材料去除机理引起了许多研究者的关注。结果，如果要生产12“〜16”晶圆时要满足平面度，TTV和粗糙度的要求，许多研究人员建议用传统的研磨，蚀刻，抛光工艺来代替传统的晶圆制造方法。为了最大程度地减少抛光工作和由此导致的形状精度下降，重要的是减少研磨引起的表面/亚表面损伤。众所周知，砂轮上磨料的粒度对获得的表面粗糙度有深远的影响。一般而言，砂砾尺寸越小，可获得的表面光洁度越好，受损层越少。但是，当磨料变小时，砂轮有更大的机会被切屑（碎屑）装载。结果，不断需要修整砂轮，并且该过程在实际生产中变得不切实际。 Ohmori开发的ELID（电解过程内修整）技术提供了一种过程内监视/修整砂轮的方法，从而可以使用超细磨料。为了将300mm〜400mm的硅片加工成规定的表面粗糙度和平面度，本研究采用ELID金刚石磨片研究其可行性。使用铸铁纤维增强的金刚石砂轮研磨硅片，并系统测试了各种ELID参数以检查其对研磨过程的影响。结果表明，在相同的磨削条件下，获得的表面具有以下特征：（1）厚的多晶/非晶层，偶尔有深穿透的裂纹；（2）厚的非晶层（最大250nm），具有分布错位环（〜300nm） （3）当（1）没有ELID，（2）峰值电压和电流较低的ELID和（3）峰值电压和电流较高的ELID时使用了薄的非晶层（最高达30nm）。研磨过程。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号