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首页> 外文会议>Sixth International Conference on Solid State Lighting >Stability and performance evaluation of High Brightness Light Emitting Diodes under DC and pulsed bias conditions
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Stability and performance evaluation of High Brightness Light Emitting Diodes under DC and pulsed bias conditions

机译：直流和脉冲偏压条件下高亮度发光二极管的稳定性和性能评估

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摘要

This paper presents an experimental analysis of high brightness light emitting diodes (HBLEDs) performance and stability under dc and pulsed current bias. Three different families of HBLEDs from three leading manufacturers have been considered. The analysis was carried out by means of current-voltage, integrated optical power and electroluminescence measurements, and failure analysis. After an initial characterization of the electrical, optical and thermal behavior of the devices, a set of ageing tests was carried out, both under dc and pulsed bias conditions. Identified degradation modes were efficiency decrease, series resistance increase, leakage current increase, and modifications of the emitted spectrum. Characterization of devices behavior during stress indicated (ⅰ) generation of non-radiative components, (ⅱ) degradation of the anode contacts and bonding wires, (ⅲ) degradation of the phosphorous layer conversion efficiency and (ⅳ) of the plastic package as possible responsible of the electrical and optical degradation of the LEDs. Comparison between dc and pulsed stress carried out using the same average current level and different duty cycle values showed that the use of pulsed bias can reduce the degradation rate with respect to dc bias. However, for duty cycles lower than 20 %, fast degradation and abrupt ruptures can take place, due to the high peak current levels.
机译：本文介绍了在直流和脉冲电流偏置下高亮度发光二极管（HBLED）性能和稳定性的实验分析。已经考虑了来自三个领先制造商的三个不同系列的HBLED。通过电流-电压，集成的光功率和电致发光测量以及故障分析来进行分析。在对器件的电气，光学和热行为进行了初步表征之后，在直流偏置和脉冲偏置条件下进行了一组老化测试。确定的降级模式为效率降低，串联电阻增加，漏电流增加以及发射光谱的修改。应力过程中器件行为的表征表明（ⅰ）产生非辐射成分，（ⅱ）阳极触点和键合线的退化，（ⅲ）磷层转换效率的退化和（as）塑料封装可能造成的LED的电和光退化。使用相同的平均电流水平和不同的占空比值进行的直流应力和脉冲应力之间的比较表明，使用脉冲偏置可以降低相对于直流偏置的劣化率。但是，对于低于20％的占空比，由于高峰值电流水平，会发生快速退化和突然破裂。

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