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Growth of GaN on ZnO for Solid State Lighting Applications

机译：用于固态照明应用的ZnO上GaN的生长

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In this work, ZnO has been investigated as a substrate technology for GaN-based devices due to its close lattice match, stacking order match, and similar thermal expansion coefficient. Since MOCVD is the dominant growth technology for GaN-based materials and devices, there is a need to more fully explore this technique for ZnO substrates. Our aim is to grow low defect density GaN for efficient phosphor free white emitters. However, there are a number of issues that need to be addressed for the MOCVD growth of GaN on ZnO. The thermal stability of the ZnO substrate, out-diffusion of Zn from the ZnO into the GaN, and H_2 back etching into the substrate can cause growth of poor quality GaN. Cracks and pinholes were seen in the epilayers, leading to the epi-layer peeling off in some instances. These issues were addressed by the use of H_2 free growth and multiple buffer layers to remove the cracking and reduce the pinholes allowing for a high quality GaN growth on ZnO substrate.
机译：在这项工作中，由于ZnO具有紧密的晶格匹配，堆叠顺序匹配和类似的热膨胀系数，因此已被研究为GaN基器件的衬底技术。由于MOCVD是GaN基材料和器件的主要增长技术，因此有必要针对ZnO衬底更全面地探索该技术。我们的目标是为有效的无磷白光发射体生长低缺陷密度的GaN。然而，在ZnO上进行GaN的MOCVD生长需要解决许多问题。 ZnO衬底的热稳定性，Zn从ZnO向外扩散到GaN中以及H_2反刻蚀到衬底中都会导致劣质GaN的生长。在外延层中发现裂缝和针孔，导致在某些情况下外延层剥落。这些问题通过使用无H_2生长和多层缓冲层来解决，以消除裂纹并减少针孔，从而在ZnO衬底上实现高质量的GaN生长，从而解决了这些问题。

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