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首页> 外文会议>Sixth International Conference on Solid State Lighting >Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition
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Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

机译：金属有机化学气相沉积在蓝宝石上生长的InGaN / GaN多量子阱发光二极管的光学和结构研究

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摘要

InGaN/GaN multiple quantum well (MQW) light emitting diode (LED) structures with blue and green light emissions have been grown on sapphire substrates by metalorganic chemical vapor deposition. They are investigated by high-resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HR-TEM), photoluminescence (PL) and photoluminescence excitation (PLE). HR-XRD showed multiple satellite peaks up to 10th order due to the quantum well superlattice confinement effects. HR-TEM determined the MQW structures and parameters, indicating the high quality of layer interfaces of these LED samples. Excitation power-dependent PL predicates that both piezoelectric field-induced quantum-confined Stark effect and band filling effect influence the luminescent properties. Temperature-dependent PL shows that the QW PL emission peak exhibits a monotonic red-shift and that the full width at half maximum of the PL band shows a W-shaped temperature-dependent behavior with increasing temperature. From the PLE results, a large energy difference, so-called quantum confined Stokes shift, between the band-edge absorption and emission was observed. Penetrating TEM revealed the V-shape defects, and quantum dot-like structures within the InGaN well region, which leads to intense light emissions from these MQW LEDs.
机译：具有蓝光和绿光发射的InGaN / GaN多量子阱（MQW）发光二极管（LED）结构已通过金属有机化学气相沉积法生长在蓝宝石衬底上。通过高分辨率X射线衍射（HR-XRD），高分辨率透射电子显微镜（HR-TEM），光致发光（PL）和光致发光激发（PLE）对它们进行了研究。由于量子阱超晶格限制效应，HR-XRD显示出多个卫星峰，最高可达10阶。 HR-TEM确定了MQW结构和参数，表明这些LED样品的层界面质量很高。依赖于激励功率的PL假设压电场感应的量子限制斯塔克效应和能带填充效应都会影响发光性能。与温度有关的PL显示QW PL发射峰呈现单调红移，并且在PL带的一半最大值处的整个宽度随温度的升高呈W形与温度有关的行为。从PLE结果，观察到在带边吸收和发射之间存在大的能量差，即所谓的量子限制的斯托克斯位移。透射电镜显示V型缺陷以及InGaN阱区内的量子点状结构，这导致这些MQW LED发出强烈的光。

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