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A UNIVERSAL MEMS FABRICATION PROCESS FOR HIGH-PERFORMANCE ON-CHIPRF PASSIVE COMPONENTS AND CIRCUITS

机译:高性能片上 r nRF无源元件和电路的通用MEMS制造工艺

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摘要

We have developed a fabrication approach that allows us tornintegrate monolithically on silicon high-performance on-chiprnradio-frequency (RF) passive components, such as inductors,rntransformers and fixed and tunable capacitors. We applied twolayerrnpolysilicon surface micromachining to construct the devices,rnwhich were suspended over 30-μm-deep cavities formed into thernsilicon substrate. We also performed electroless copper (Cu)rnplating to metallize the polysilicon structures for highrnconductivity. The inner surfaces of the cavities were Cu coatedrntoo, providing good RF ground and electromagnetic shielding. Therndeep cavities dramatically reduce the electric and magneticrncouplings and parasitic capacitances between the devices and thernsubstrate. High quality factors over 30 and resonant frequenciesrnover 10 GHz have been achieved for inductors. We have designedrnand fabricated high-performance varactors, transformers and LCpassivernfilters as well.
机译:我们已经开发出一种制造方法,该方法允许我们在硅上集成单片高性能片上射频(RF)无源元件,例如电感器,变压器,固定和可调电容器。我们应用了两层多晶硅表面微加工技术来构建器件,将其悬挂在形成于硅衬底中的30μm深的空腔中。我们还执行了化学镀铜(Cu)rn镀敷以金属化多晶硅结构以实现高导电性。空腔的内表面镀有铜,提供了良好的射频接地和电磁屏蔽。深腔大大降低了器件与基板之间的电耦合和磁耦合以及寄生电容。电感器已达到30以上的高质量因数和10 GHz以上的谐振频率。我们还设计并制造了高性能变容二极管,变压器和LC无源滤波器。

著录项

  • 来源
  • 会议地点 Hilton Head Island SC(US)
  • 作者单位

    School of Electrical and Computer Engineering, Cornell UniversityrnIthaca, NY 14850;

    School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850;

    School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850;

    School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850;

    School of Electrical and Computer Engineering, Cornell University Ithaca, NY 14850;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TM938.865;
  • 关键词

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