Study on effect of proton irradiation energy in AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

著录项

• 来源
  《State-of-the-art program on compound semiconductors 58》|2015年|129-135|共7页
• 会议地点 Phoenix AZ(US)
• 作者

  Shihyun Ahn; Chen Dong; Weidi Zhu; Byung-Jae Kim; Ya-His Hwang; Fan Ren; Stephen J. Pearton; Gwangseok Yang; Jihyun Kim; Ivan I. Kravchenko;

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• 作者单位

  Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611;

  Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611;

  Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611;

  Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611;

  Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611;

  Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611;

  Department of Material Science and Engineering, University of Florida, Gainesville, Florida 32611;

  Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, Korea;

  Department of Chemical and Biological Engineering, Korea University, Seoul 136-713, Korea;

  Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830;

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• 原文格式 PDF
• 正文语种 eng
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