Interface Conduction between Conductive ReO_3 Thin Film and NdBa_2Cu_3O_6 Thin Film

机译：导电ReO_3薄膜与NdBa_2Cu_3O_6薄膜之间的界面传导

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The Re oxide films were deposited on quartz glasses by RF reactive sputtering from a Re metal target. The lowest resistivity was observed in the film in-situ annealed at 200℃ in Ar atmosphere and showed the order of 10~(-4) Ω cm of which the value was still about 10 times as large as that of a single crystal ReO_3. The temperature dependence of the resistivity revealed a metallic behavior. A superconductivity did not take place in the bilayered film of ReO_3 / NdBa_2Cu_3O_6. In the interface region the resistivity minimum probably caused by the Kondo effect was observed in the neighborhood of 120 K.

机译：通过RF反应溅射从Re金属靶将Re氧化物膜沉积在石英玻璃上。在Ar气氛中于200℃原位退火的薄膜中观察到最低电阻率，并显示出10〜（-4）Ωcm的量级，其值仍约为单晶ReO_3的10倍。电阻率的温度依赖性显示出金属行为。 ReO_3 / NdBa_2Cu_3O_6的双层膜未发生超导。在界面区域，在120 K附近观察到可能由近藤效应引起的最小电阻率。

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来源
《Structure-Property Relationships of Oxide Surfaces and Interfaces II》|2002年|p.213-218|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Manabu Ohkubo; Kumiko Fukai; Kohji Matsuo; Nobuyuki Iwata; Hiroshi Yamamoto;
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作者单位

Department of Electronics Computer Science, College of Science Technology, Nihon University 7-24-1 Narashinodai, Funabashi-shi, Chiba 274-8501, Japan;

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正文语种 eng
中图分类化学;
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4. Interface Conduction between Conductive ReO_3 Thin Film and NdBa_2Cu_3O_6 Thin Film [C] . Manabu Ohkubo, Kumiko Fukai, Kohji Matsuo, Materials Research Society Symposium . 2003

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Interface Conduction between Conductive ReO_3 Thin Film and NdBa_2Cu_3O_6 Thin Film

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