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The Effect of Changing Epitaxial Strain on Colossal Magnetoresistance Thin Films

机译：改变外延应变对大磁阻薄膜的影响

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摘要

We have studied the properties of epitaxial La_(1-x)Sr_xMnO_3 (x = 0.3, 0.5) epitaxial thin films grown on BaTiO_3 and SrTiO_3. Significant modifications of properties are observed in magnetization and resistivity versus temperature experiments. These modifications occur at temperatures corresponding to structural phase transitions in the substrate. The x = 0.5 composition is particularly sensitive to changes in the epitaxial strain state, exhibiting a direct correlation between changes in strain, magnetization and resistivity. Strain can also be induced in BaTiO_3 by the inverse piezoelectric effect, which results in as much as a 13% decrease in the resistivity of the film.
机译：我们研究了在BaTiO_3和SrTiO_3上生长的外延La_（1-x）Sr_xMnO_3（x = 0.3，0.5）外延薄膜的特性。在磁化强度和电阻率对温度的实验中观察到了性能的重大变化。这些修饰发生在对应于基板中结构相变的温度下。 x ＝ 0.5的组成对外延应变状态的变化特别敏感，表现出应变，磁化强度和电阻率变化之间的直接相关性。逆压电效应也可以在BaTiO_3中引起应变，从而使薄膜的电阻率降低多达13％。

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