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首页> 外文会议>Symposium on Advanced Interconnects and Contacts held April 5-7, 1999,San Francisco, California, U.S.A. >Stress enhanced arsenic diffusion in titanium salicided junctions by implantation into C49 TiSi_2 and rapid thermal annealing
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Stress enhanced arsenic diffusion in titanium salicided junctions by implantation into C49 TiSi_2 and rapid thermal annealing

机译：通过注入C49 TiSi_2和快速热退火，应力增强了砷化钛结中砷的扩散。

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摘要

We studied reverse leakage current in n+/p titanium-salicided shallow junctions using C49 Ti-Silicide as a diffusion source. After Ti deposition, rapid thermal annealing (RTA) was performed to form the C49 Ti-silicide. Subsequently, arsenic ions were implanted and a 2nd RTA was carried out at 850 deg C to form the low resistivity C54 Ti-silicide. In spite of no drive-in process following the 2nd annealing, the implanted As diffused well into Si substrate and the reverse leakage current of the n+/p junctions was reduced to two orders of magnitude lower. Since the high chemical affinity of As to Ti-silicide trapped the dopant in the silicide, it has bene known that Ti or Ti-silicide cannot be used as a diffusion source. However, in this work, we found that the C49 Ti-silicide acted as a diffusion source of As ions. The reason of fast diffusivity is attributed to the generation of high tensile stress induced by As implantation.
机译：我们研究了使用C49钛硅化物作为扩散源的n + / p钛硅化浅结中的反向泄漏电流。沉积Ti之后，进行快速热退火（RTA）以形成C49 Ti硅化物。随后，注入砷离子，并在850摄氏度下进行第二次RTA，以形成低电阻率的C54 Ti硅化物。尽管在第二次退火后没有驱入工艺，注入的As仍很好地扩散到了Si衬底中，n + / p结的反向泄漏电流降低了两个数量级。由于As对Ti硅化物的高化学亲和力将掺杂剂捕获在硅化物中，因此已经知道不能将Ti或Ti硅化物用作扩散源。但是，在这项工作中，我们发现C49钛硅化物充当了As离子的扩散源。快速扩散的原因归因于As注入引起的高拉伸应力的产生。

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