首页> 外文会议>Symposium on Atomic Resolution Microscopy of Surfaces and Interfaces held December 3-5, 1996, Boston; Massachusetts,U.S.A. >The improtance of the fringing surrounding a tem foil to the quantification of phase contrast at a P-N junction
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The improtance of the fringing surrounding a tem foil to the quantification of phase contrast at a P-N junction

机译:包围箔的边缘对定量P-N结处的相衬度的重要性

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摘要

The space charge contribution to the electrostatic potential both inside and outside a dielectric slab containing a p-n junction is calculated using classical electrostatics, with particular reference to the use of phase contrast techniques in transmission electron microscopy for the characterisation of the carrier distributions present at such layers.
机译:使用经典的静电计算空间电荷对包含pn结的介电平板内部和外部的静电势的贡献,特别是参考透射电子显微镜中相衬技术的使用来表征在此类层上存在的载流子分布。

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