Chemical imaging of InGaAs/InAlAs quantum wells

机译：InGaAs / InAlAs量子阱的化学成像

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We have applied high resolution chemical imaging in a transmission electron microscope to study compositional variations across InGaAs/InAlAs double quantum well structures. The structures of interest are grown on an InP substrate and consist of two 40 A layers of InCaAs separated by 20 A of InAlAs. For this (InGa)_x(InAl)_1-xAs system, we have been able to obtain compositional information with an accuracy of about 20

机译：我们已经在透射电子显微镜中应用了高分辨率化学成像，以研究整个InGaAs / InAlAs双量子阱结构的组成变化。感兴趣的结构在InP衬底上生长，由两层40 A的InCaAs层和20 A的InAlAs隔开。对于这个（InGa）_x（InAl）_1-xAs系统，我们已经能够获得精度约为20的成分信息

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《Symposium on Atomic Resolution Microscopy of Surfaces and Interfaces held December 3-5, 1996, Boston; Massachusetts,U.S.A.》|1996年|p.57-62|共6页
会议地点 Boston MA(US)
作者
G.Mountjoy; P.A.Crozier; P.L.Fejes; R.K.Tsui; G.D.Kramer;
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正文语种 eng
中图分类一般工业技术;
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专利

1. Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well [J] . Galiev G. B., Vasilevskii I. S., Klimov E. A., Semiconductors . 2015,第2期

机译：包含复合InAlAs / InGaAs / InAs / InGaAs / InAlAs量子阱的HEMT纳米异质结构的光致发光的特定特征
2. Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition [J] . Yong Huang, Jae-Hyun Ryou, Russell D. Dupuis, Journal of Crystal Growth . 2011,第1期

机译：金属有机化学气相沉积法优化InGaAs / InAlAs / InP量子级联激光器的生长条件
3. Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures [J] . Solovev V. A., Chernov M. Yu, Komkov O. S., JETP Letters . 2019,第6期

机译：强烈不匹配的GaAs和InAs在Inalas缓冲层中的影响在变质InAs（Sb）/ InGaAs / Inalas / GaAs量子限制异质结构的结构和光学性质上
4. Chemical imaging of InGaAs/InAlAs quantum wells [C] . G.Mountjoy, P.A.Crozier, P.L.Fejes, Symposium on atomic resolution microscopy of surfaces and interfaces . 1997

机译：Ingaas / Inalas量子井的化学成像
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Rashba Spin-Orbit Coupling Probed by the Weak Antilocalization Analysis in InAlAs/InGaAs/InAlAs Quantum Wells as a Function of Quantum Well Asymmetry [O] . Koga Takaaki, Nitta Junsaku, Akazaki Tatsushi, 2002

机译：通过InAlAs / InGaAs / InAlAs量子阱中的弱反定位分析探测的Rashba自旋轨道耦合与量子阱不对称性的关系
8. Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors. [R] . Bennett, B. R., Chick, T. F., Boos, J. B., 2014

机译：用于互补III-V晶体管的应变InGaas / Inalas量子阱。

Chemical imaging of InGaAs/InAlAs quantum wells

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