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首页> 外文会议>Symposium on Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials, held December 1-2, 1997, Boston, Massachusetts, U.S.A. >Characterization of diamond like carbon film fabricated by ECR plasma CVD at room temperature
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Characterization of diamond like carbon film fabricated by ECR plasma CVD at room temperature

机译：室温下通过ECR等离子体CVD制备的类金刚石碳膜的表征

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摘要

Low temperature (about 50 deg C) fabrication of diamond like carbon (DLC) films with a high hardness (>3000Hv) and a high electrical resistivity (>10~(11) OMEGA cm) has been achieved. In order to obtain such a result, the effect of ion impingement on the growth and structural change of DLC films in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) method was investigated. It was confirmed that ion impingement was fundamentally required in the growth of DLC films. Furthermore, impingement with ions energized by bias voltages between 50 V and 150 V had a major influence on the sp~2/sp~3 configuration in DLC films. This configuration is found to be rather sensitive to optoelectronic properties but not so sensitive to film hardness.
机译：已经实现了低温（约50摄氏度）的高硬度（> 3000Hv）和高电阻率（> 10〜（11）OMEGA cm）的类金刚石碳（DLC）薄膜的制造。为了获得这样的结果，研究了在电子回旋共振（ECR）等离子体增强化学气相沉积（CVD）方法中离子撞击对DLC膜的生长和结构变化的影响。可以肯定的是，在DLC膜的生长中根本需要离子撞击。此外，由50 V和150 V之间的偏置电压激发的离子的撞击对DLC膜中的sp〜2 / sp〜3构型有重大影响。发现该配置对光电性能相当敏感，但对膜硬度不敏感。

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