Formation of Pb inclusions in Si by ion implantation

机译：通过离子注入在硅中形成Pb夹杂物

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Si<110> single crystals were implanted at a temperature of 835 K with 150 keV Pb~+ ions to a fluence of 1 centre dot 10~(20) m~(-2) corresponding to an average concentration of 2-3 at

机译：在835 K的温度下以150 keV Pb〜+离子注入Si <110>单晶，注入量为1个中心点10〜（20）m〜（-2），对应于平均浓度为2-3。

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《Symposium on Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials, held December 1-2, 1997, Boston, Massachusetts, U.S.A.》|1997年|p.411-416|共6页
会议地点 Boston MA(US)
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V.S.Touboltsev; E.Johnson; U.Dahmen; A.Johansen; L.Sarholt; S.Q.Xiao;
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Formation of Pb inclusions in Si by ion implantation

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