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首页> 外文会议>Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US >Limiting Native Oxide Regrowth for High-k Gate Dielectrics
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Limiting Native Oxide Regrowth for High-k Gate Dielectrics

机译：限制高k栅极电介质的原生氧化物再生

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摘要

A cleaning process resulting in atomically smooth, hydrogen-terminated, silicon surface that would inhibit formation of native silicon oxide is needed for high-k gate dielectric deposition. Various cleaning methods thus need to be tested in terms of resistance to native oxide formation. Native oxide re-growth is studied as a function of exposure time to atmospheric ambient using ellipsometry. Hafnium dioxide film (k～23) is deposited on the as-cleaned substrates by electron beam evaporation and subsequently annealed in hydrogen. The difference in the effective oxide thickness re-grown on surfaces treated with the conventional RCA and modified Shiraki cleaning methods, after one-hour exposure, can be as large as 2 A. This is significant in device applications demanding equivalent oxide thickness less than 20 A. The degree of hydrogen passivation, surface micro-roughness and organic removal capability are considered to be the main factors that explain the differences between the cleaning methods. Data derived from capacitance-voltage analysis of test capacitors verified the trend observed in the native oxide thickness measurements. An increase of 10～15 % in accumulation capacitance is observed in the samples treated by the new cleaning method.
机译：高k栅极电介质沉积需要一种清洁工艺，该工艺需要原子上光滑，氢封端的硅表面，从而抑制天然氧化硅的形成。因此，需要对天然氧化物形成的抵抗力测试各种清洁方法。使用椭偏光度法研究了天然氧化物的再生长与暴露于大气环境的时间的关系。通过电子束蒸发将二氧化薄膜（k〜23）沉积在清洁后的基板上，然后在氢气中退火。暴露一小时后，用常规RCA和改良的Shiraki清洁方法处理过的表面重新生长的有效氧化物厚度的差异可能高达2A。这在要求等效氧化物厚度小于20的设备应用中非常重要答：氢钝化程度，表面微粗糙度和有机去除能力被认为是解释清洁方法之间差异的主要因素。从测试电容器的电容电压分析得出的数据验证了在自然氧化物厚度测量中观察到的趋势。新清洗方法处理后的样品，其累积电容增加了10〜15％。

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