Interface characteristics of ZrO_2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

Jungwoo Oh; Prashant Majhi; Hsing-Huang Tseng; Raj Jammy; David Q. Kelly; Sanjay K. Banerjee; Joe C. Campbell

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Interface characteristics of ZrO_2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

机译：Ge天然氧化物的热脱附和Ge氮化后外延Ge电容器层上ZrO_2高k栅极电介质的界面特性

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The authors report on interface characteristics of ZrO_2 high-k gate dielectrics on Ge epitaxial layers integrated on Si substrates. For surface passivation, thermal desorption of Ge native oxide and Ge nitridation processes is applied to epitaxial Ge capacitor layers. Metal-oxide-semiconductor capacitors exhibit excellent electrical characteristics with a gate leakage current density of 6× 10~(-7)-1 × 10~(-6) A/cm~2 with a capacitance equivalent thickness of 1.5-1.3 nm at a gate voltage of 1 V. Thermal behavior of Ge native oxide and nitrided Ge layers is correlated with electrical characteristics.

机译：作者报告了ZrO_2高k栅极电介质在集成在Si衬底上的Ge外延层上的界面特性。对于表面钝化，将Ge天然氧化物的热脱附和Ge氮化工艺应用于外延Ge电容器层。金属氧化物半导体电容器具有极好的电特性，栅极漏电流密度为6×10〜（-7）-1×10〜（-6）A / cm〜2，电容等效厚度为1.5-1.3 nm。栅极电压为1V。Ge本征氧化物和氮化Ge层的热行为与电特性相关。

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来源
《Thin Solid Films》 |2008年第12期|4107-4110|共4页
作者
Jungwoo Oh; Prashant Majhi; Hsing-Huang Tseng; Raj Jammy; David Q. Kelly; Sanjay K. Banerjee; Joe C. Campbell;
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作者单位

SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 USA;

SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 USA;

SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 USA;

SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 USA;

University of Texas, Austin, Texas 78758 USA;

University of Texas, Austin, Texas 78758 USA;

University of Virginia, Charlottesville, VA 22904 USA;

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正文语种 eng
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germanium; metal-oxide-semiconductor capacitors; high-k gate dielectrics; X-ray diffraction; atomic layer deposition; zirconium oxide;

机译：锗;金属氧化物半导体电容器;高k栅极电介质;X射线衍射;原子层沉积;氧化锆;

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1. Thermal stability of nanoscale Ge metal-oxide-semiconductor capacitors with ZrO_2 high-k gate dielectrics on Ge epitaxial layers [J] . Jungwoo Oh, Prashant Majhi, Chang Yong Kang, Applied Physics Letters . 2007,第20期

机译：Ge外延层上具有ZrO_2高k栅极电介质的纳米级Ge金属氧化物半导体电容器的热稳定性
2. Wide-bandgap high-k Y_2O_3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric [J] . C. X. Li, P. T. Lai Applied Physicsletters . 2009,第2期

机译：宽带隙高k Y_2O_3作为钝化中间层，用于增强具有高k HfTiO栅极电介质的n-Ge金属氧化物半导体电容器的电性能和高场可靠性
3. Characteristics of High-k ZrO_2 Gate Dielectrics on O_2 N_2O Plasma Treated Si_(0.69)Ge_(0.3)C_(0.01) Si Heterolayers [J] . R. Mahapatra, S. Maikap, A. Dhar Ferroelectrics: Letters Section . 2005,第1期

机译：O_2 N_2O等离子体处理的Si_（0.69）Ge_（0.3）C_（0.01）Si异质层上高k ZrO_2栅极电介质的特性
4. A New Low Thermal Budget Approach to Interface Nitridation for Ultra-Thin Silicon Dioxide Gate Dielectrics by OCmbined Plasma-Assisted and Rapid Thermal Processing [C] . H.Niimi, H.Y.Yang, G.Lucovsky . 1998

机译：OC-等离子体辅助快速热处理技术对超薄氧化硅栅介质进行界面氮化的低热预算新方法
5. High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hafnium-based high-K gate dielectrics and interface engineering for hafnium oxide/germanium CMOS device [D] . Lu, Nan 2006

机译：适用于未来规模化技术的高介电常数电介质和高迁移率半导体：氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
6. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric [O] . Pengkun Xia, Xuewei Feng, Rui Jie Ng, -1

机译：单层MoS2和HfO2高介电常数MOS电容器中界面状态的影响和起源
7. Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor [O] . Xu JP, Zou X, Lai PT, 2007

机译：通过水蒸气退火抑制具有高k栅极电介质的Ge金属氧化物半导体电容器中不稳定的低fr GeOx中间层的生长

Interface characteristics of ZrO_2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

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