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首页> 外文会议>Symposium on CMOS Front - End Materials and Process Technology; 20030422-20030424; San Francisco,CA; US >Formation of NiSi-silicided p~+n shallow junctions using implant through silicide and low temperature furnace annealing
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Formation of NiSi-silicided p~+n shallow junctions using implant through silicide and low temperature furnace annealing

机译：通过硅化物注入和低温炉退火形成NiSi硅化的p〜+ n浅结

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摘要

NiSi-silicided p~+n shallow junctions are fabricated using BF_2~+ implantation into/through thin NiSi silicide layer (ITS technology) followed by low temperature furnace annealing (from 550 to 800℃). The NiSi film agglomerates following a thermal annealing at 600℃, and may result in the formation of discontinuous islands at a higher temperature. The incorporation of fluorine atoms in the NiSi film can retard the formation of film agglomeration and thus improve the film's thermal stability. A forward ideality factor of about 1.02 and a reverse current density of about 1nA/cm~2 can be attained for the NiSi(310A)/p~+n junctions fabricated by BF_2~+ implantation at 35 keV to a dose of 5x10~(15)cm~(-2) followed by a 650℃ thermal annealing; the junction formed is about 60nm measured from the NiSi/Si interface. Activation energy measurements show that the reverse bias junction currents are dominated by the diffusion current, indicating that most of the implanted damages can be recovered after annealing at a temperature as low as 650℃.
机译：通过将BF_2〜+注入/穿过薄的NiSi硅化物层（ITS技术），然后进行低温炉退火（550至800℃），制造了NiSi硅化的p〜+ n浅结。在600℃下进行热退火后，NiSi膜发生团聚，并可能在较高温度下形成不连续的岛。在NiSi膜中掺入氟原子可以延缓膜团聚的形成，从而提高膜的热稳定性。对于以35 keV的BF_2 +注入剂量为5x10〜（）注入的NiSi（310A）/ p〜+ n结，可实现约1.02的正向理想系数和约1nA / cm〜2的反向电流密度。 15）cm〜（-2），然后进行650℃的热退火；从NiSi / Si界面测量，形成的结约为60nm。活化能的测量表明，反向偏置结电流受扩散电流的支配，这表明在低至650℃的温度下退火后，大部分注入的损伤可以恢复。

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