Energy band offsets at a Ga_2O_3(Gd_2O_3)-GaAs interface

机译：Ga_2O_3（Gd_2O_3）-GaAs界面的能带偏移

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We report the energy band offsets at a Ca_2O_3(Gd_2O_3)-GaAs interface. The valence-band offset ( DELTA E_v) is approx 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-Ga_2O_3(Gd_2O_3)-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset ( DELTA E_C) approx 1.4 eV at the Ga_2O_3(Gd_2O_3)-GaAs interface and an electron effective mass (m) approx 0.29 m_e of the Ga_2O_3(Gd_2O_3) film.

机译：我们报告了Ca_2O_3（Gd_2O_3）-GaAs界面的能带偏移。通过软X射线光发射光谱法测量的价带偏移（DELTA E_v）约为2.6eV。对以Fowler-Nordheim隧穿为主导的Pt-Ga_2O_3（Gd_2O_3）-GaAs MOS（金属氧化物半导体）结构的电流-电压特性的分析显示，导通带偏移（DELTA E_C）在约1.4 eV Ga_2O_3（Gd_2O_3）-GaAs界面和Ga_2O_3（Gd_2O_3）膜的电子有效质量（m）约为0.29 m_e。

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《Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A.》|1999年|p.131-135|共5页
会议地点 San Francisco CA(US)
作者
T.S.Lay; M.Hong; J.Kwo; J.P.Mannaerts; W.H.Hung; D.J.Huang;
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中图分类无线电电子学、电信技术;
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1. Atomic-scale determination of band offsets at the Gd_2O_3/GaAs (100) hetero-interface using scanning tunneling spectroscopy [J] . Y. P. Chiu, B. C. Huang, M. C. Shin, Applied Physics Letters . 2011,第21期

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2. On the band-structure lineup at Ga_2O_3, Gd_2O_3, and Ga_2O_3(Gd_2O_3) heterostructures and Ga_2O_3 Schottky contacts [J] . Winfried Moench Journal of materials science . 2016,第2期

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3. Energy-band parameters at the GaAs-- and GaN-Ga_2O_3(Gd_2O_3) interfaces [J] . T.S. Lay, M. Hong, J. Kwo Solid-State Electronics . 2001,第9期

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Energy band offsets at a Ga_2O_3(Gd_2O_3)-GaAs interface

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