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首页> 外文会议>Symposium on Compound Semiconductor Surface Passivation and Novel Device Processing held April 5-7, 1999, San Francisco, California,U.S.A. >A novel surface passivation structure for III-V compound semiconductors utilizing a silicon interface control layer and its application
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A novel surface passivation structure for III-V compound semiconductors utilizing a silicon interface control layer and its application

机译：利用硅界面控制层的III-V族化合物半导体的新型表面钝化结构及其应用

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摘要

The present status of surface passivation research for III-V compound semiconductors utilizing a novel unique structure including a silicon interface control layer (Si ICL) is presented and discussed. The basic principle of passivation is to insert an ultrathin MBE-grown Si layer between bonds of the III-V material with Si atoms and then to transfer Si-bonds smoothly to those of the Si based in sulator was optimized. Such a structure was realized by partial nitridation of Si ICL surface. In-situ surface characterization techniques including newly developed UHV contactless C-V technique, were used for optimization of each passivation step. Surface reconstruction of initial semiconductor surface was found to have a great influence on passivation. In the case of GaAs, the c(4x4) surface is preferable to the (2x4) surface. the novel process has realized the oxide-free surfacepassivation of InP with a N_ssmin value of 2x10~10 cm~-2 eV~-1. Furthermore, the novel passivation technique has been successfully applied to the fabrication of MISFETs and IGHEMTs, and the passivation of quantum structures.
机译：提出并讨论了利用包括硅界面控制层（Si ICL）在内的新型独特结构对III-V型化合物半导体进行表面钝化研究的现状。钝化的基本原理是在III-V材料与硅原子的键之间插入MBE生长的超薄硅层，然后将硅键平稳地转移到优化的绝缘子中。通过对Si ICL表面进行部分氮化来实现这种结构。包括新开发的UHV非接触式C-V技术在内的原位表面表征技术用于优化每个钝化步骤。发现初始半导体表面的表面重建对钝化有很大影响。在GaAs的情况下，c（4×4）表面比（2×4）表面更好。该新方法实现了N_ssmin值为2x10〜10 cm〜-2 eV〜-1的InP的无氧化物表面钝化。此外，新颖的钝化技术已成功地应用于MISFET和IGHEMT的制造以及量子结构的钝化。

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