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首页> 外文会议>Symposium on Covalently Bonded Disordered Thin-Film Materials held December 2-4, 1997, Boston, Massachusetts, U.S.A. >Lcvd of CN_x layers from NH_3/CCl_4 mixture using CuBr vapor laser
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Lcvd of CN_x layers from NH_3/CCl_4 mixture using CuBr vapor laser

机译：使用CuBr蒸气激光从NH_3 / CCl_4混合物中CN_x层的Lvvd

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摘要

Amorphous CN_x films were obtained on monocrystalline silicon substrates by direct writing laser induced chemical vapor deposition from CCl_4 and NH_3 using CuBr vapor laser. The main process parameters (scanning speed, laser power, background temperature) were varied in wide ranges. The deposition rates in the laser spot were in the range of 1 - 10 mu m/s. Scanning electron microscopy showed that the layers had rather rough surface. The deposited films were composed of carbon, nitrogen, silicon and oxygen, as detected by AES and EDX analyses. Chemical bonding structure was investigated by FTIR and showed absorption bands corresponding to different chemical groups - CH, CH_2, CH_3, C=C, C=N, C=O, Si-O, Si-C, Si-N and C-N. The electrical measurements of the deposited films showed that their resistivity varied from 0.15 to 1.40 M OMEGA .cm and it was very sensitive tot he deposition conditions.
机译：通过使用CuBr蒸气激光器从CCl_4和NH_3直接写入激光诱导化学气相沉积，在单晶硅基板上获得了非晶CN_x膜。主要工艺参数（扫描速度，激光功率，背景温度）变化很大。激光光斑中的沉积速率在1-10μm/ s的范围内。扫描电子显微镜显示这些层具有相当粗糙的表面。如通过AES和EDX分析所检测，沉积的膜由碳，氮，硅和氧组成。通过FTIR研究了化学键结构，并显示了对应于不同化学基团CH，CH_2，CH_3，C = C，C = N，C = O，Si-O，Si-C，Si-N和C-N的吸收带。沉积膜的电学测量表明，它们的电阻率在0.15至1.40 M OMEGA.cm之间变化，并且对沉积条件非常敏感。

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