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Method for forming cobalt layer using laser chemical vapor deposition and laser chemical vapor deposition device

机译：利用激光化学气相沉积形成钴层的方法和激光化学气相沉积装置

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摘要

A method of forming a cobalt film using laser chemical vapor deposition is provided. Cobalt film forming process according to the invention the Co ₂ (CO) wherein Co ₂ (CO) applying a laser beam to ₈ gas supplied to the stage and the substrate for supplying the ₈ gas and a carrier gas, Co ₂ (CO) on a substrate ₈ / RTI gas and / or photolysis of the cobalt film on the substrate. According to the present invention, a Co (cobalt) thin film having excellent electrical conductivity and purity can be deposited through a laser chemical vapor deposition process under a specific deposition condition. In addition, simpler selective patterns can be formed through laser chemical vapor deposition which enables direct writing. Furthermore, it is possible to provide a repair process of a display panel having a narrow line width and a low resistivity applicable to a high-resolution display panel.

机译：提供了一种利用激光化学气相沉积形成钴膜的方法。根据本发明的钴膜形成方法，其中Co _{2 （CO）其中，Co _{2 （CO）对供给至的_{8 气体施加激光束在基板_{8 8 气体和载气Co _{2 （CO）的平台和基板气体和/或衬底上钴膜的光解。根据本发明，可以在特定的沉积条件下通过激光化学气相沉积法沉积具有优异的导电性和纯度的Co（钴）薄膜。另外，可以通过能够直接写入的激光化学气相沉积来形成更简单的选择图案。此外，可以提供适用于高分辨率显示面板的具有窄的线宽和低电阻率的显示面板的修复工艺。}}}}}

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公开/公告号KR101839212B1

专利类型
公开/公告日2018-03-16

原文格式PDF
申请/专利权人 국민대학교산학협력단;
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申请/专利号KR20160087176
发明设计人 이재갑;정대균;정경훈;이지원;
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申请日2016-07-08
分类号C23C16/48;C23C16/16;C23C16/448;C23C16/458;C23C16/52;
国家 KR
入库时间 2022-08-21 12:38:11

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