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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Processing of PbTiO_3 and Pb(Zr_xTi_1-x)O_3 thin films by novel single-solid-source metalorganic chemical vapor deposition
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Processing of PbTiO_3 and Pb(Zr_xTi_1-x)O_3 thin films by novel single-solid-source metalorganic chemical vapor deposition

机译：新型单固源金属有机化学气相沉积法处理PbTiO_3和Pb（Zr_xTi_1-x）O_3薄膜

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摘要

Ferroelectric PbTiO_3 (PT) and Pb(Zr_xTi_1-x)O_3 (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO_2/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems assoicated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited PT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have bene carried out. Effects of substrate, substrate temperature, system system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.
机译：通过使用新型的单一固源金属有机化合物，在（100）MgO和（111）Pt / SiO_2 /（100）Si衬底上沉积了铁电PbTiO_3（PT）和Pb（Zr_xTi_1-x）O_3（PZT）薄膜。气相沉积（MOCVD）技术。新技术使用粉末输送系统将混合的前体粉末从室温直接输送到热蒸发器中，因此，避免了与蒸发之前的前体聚合或分解相关的任何问题。该技术极大地简化了MOCVD处理，并可以提高处理的可靠性和可重复性。沉积的PT和PZT膜具有钙钛矿结构，并且相对于基材高度取向。随着过程控制的改进，已经进行了在各种生长条件下的膜演变的系统研究。本文将介绍基材，基材温度，系统系统真空度以及混合物中前体比例对薄膜微观结构和性能的影响。

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