Growth of ZnO thin films on sapphire substrates by ECR-assisted MBE

机译：ECR辅助MBE在蓝宝石衬底上生长ZnO薄膜

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Epitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the lectron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in a ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high auality epitaxial ZnO films on c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al_2O_3 with in -plane alignment of [1100]ZnO//[2110]Al_2O_3, which is equivalent to the 30 deg rotation of ZnO relative to sapphire in the c-plane.

机译：使用电子回旋加速器共振辅助分子束外延（ECR辅助MBE）技术在低温下在c面蓝宝石衬底上生长外延ZnO膜。在这种方法中，由Knudsen电池提供的Zn蒸气与在蓝宝石衬底表面上的ECR源中活化的氧气反应。研究了薄膜的晶体结构，表面形貌和外延关系。证实了ECR辅助MBE技术能够在c面蓝宝石衬底上生长高质量的外延ZnO膜，确定为（0001）ZnO //（0001）Al_2O_3，面内取向为[1100] ZnO // [2110] Al_2O_3，相当于ZnO在c平面中相对于蓝宝石旋转30度。

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《Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A》|1997年|p.395-400|共6页
会议地点 San Francisco CA(US)
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Hee-Bog Kang; Kiyoshi Nakamura; Kazuo Ishikawa;
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2. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical liftoff and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire [J] . S. Gautier, T. Moudakir, G. Patriarche, Journal of Crystal Growth . 2013,第maya1期

机译：使用化学剥离和室温直接晶片键合以及GaN晶片规模在ZnO缓冲蓝宝石上进行GaN晶片规模的MOVPE生长，从蓝宝石转移到玻璃基板的MOVPE GaN薄膜的结构和成分表征
3. ZnO growth on si with low-temperature ZnO buffer layers by ECR-assisted MBE [J] . Xiu FX, Yang Z, Zhao DT, Journal of Crystal Growth . 2006,第1期

机译：ECR辅助MBE在具有低温ZnO缓冲层的硅上生长ZnO
4. Growth of ZnO thin films on sapphire substrates by ECR-assisted MBE [C] . Hee-Bog Kang, Kiyoshi Nakamura, Kazuo Ishikawa, Symposium on epitaxial oxide thin films . 1997

机译：ECR辅助MBE的蓝宝石基材上ZnO薄膜的生长
5. Growth of heteroepitaxial single crystal lead magnesium niobate-lead titanate thin films on r-plane sapphire substrates. [D] . Sunder, Madhana. 2009

机译：在r面蓝宝石衬底上生长异质外延单晶铌酸铅镁钛酸铅薄膜。
6. Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications [O] . Florian Bartoli, Jérémy Streque, Jaafar Ghanbaja, 2020

机译：SC0.09Al0.91N和SC0.18A10.82N的外延生长通过磁控溅射对表面声波应用的磁控溅射薄膜
7. Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates [O] . Liu, C., Chang, S. H., Noh, T. W., 2006

机译：初始生长行为及其微观结构特征蓝宝石（0001）衬底上的异质外延ZnO薄膜

Growth of ZnO thin films on sapphire substrates by ECR-assisted MBE

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