首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Improved dielectric response in strontium titanate thin films grown by pulsed laser ablation
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Improved dielectric response in strontium titanate thin films grown by pulsed laser ablation

机译:脉冲激光烧蚀生长的钛酸锶薄膜中介电响应的改善

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We have grown epitaxial strontium titanate films on lanthanum aluminate substrates at a range of oxygen pressures and substrate temperatures. The complex dielectric function was measured versus frequency (10 kHz to 1 MHz) and temperature (room temperature to 4.2 K) on coplanar capacitors patterned on the films. Preliminary data from 1.5 to 2.5 GHz is also presented. The dielectric constant epsilon _r was as high as 4600 at 65 K, a factor of two greater than previously reported for strontium titanate thin films and a factor of 1.8 greater than the bulk value at the same temperature. Tuning the capacitor by applying a dc bias of +-15 V across the 3 um m coplanar gap at 4.2 K yielded a ratio of maximum to minimum dielectric constant of 2.8 At 101 K this ratio was 2.2 A bulk capacitor does not show tuning over such a large temperature range.
机译:我们已经在一定的氧气压力和衬底温度下在铝酸镧衬底上生长了钛酸锶锶薄膜。在薄膜上构图的共面电容器上,测量其相对介电常数与频率(10 kHz至1 MHz)和温度(室温至4.2 K)之间的关系。还介绍了1.5至2.5 GHz的初步数据。在65 K时,介电常数εr高达4600,比先前报道的钛酸锶薄膜大2倍,比相同温度下的体积值大1.8倍。通过在4.2 K的3 um m共面间隙上施加+ -15 V的直流偏置来对电容器进行调谐,产生的最大介电常数与最小介电常数之比为2.8。在101 K时,该比率为2.2。温度范围大。

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