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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Structure-property relastionships in SrRuO_3 epitaxial thin films
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Structure-property relastionships in SrRuO_3 epitaxial thin films

机译：SrRuO_3外延薄膜中的结构性质恢复

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摘要

Epitaxial SrRuO_3 films were prepared on (001) SrTiO_3 substrates by pulsed laser deposition. The film structure was characterized by 4-circle x-ray diffraction and the electrical deposition. The film structure was characterized by 4-circlex-ray diffraction and the electrical behavior by temperature dependent resistivity measuremdents. With variations in the deposition conditions, significant changesin both structural and electricla properties were observed. When deposited under conditions favoring appreciable energetic bombardment, the SrRuO_3 films on SrTiO_3 exhibited extended in and out-of-plane lattice constants and increasedvalues of resistivity; in addition, a depression of the Curie temperature was measured. SrRuO_3 deposited under less aggressive conditions displayed structures and properties more similar to those associated with bulk crystals.
机译：通过脉冲激光沉积在（001）SrTiO_3衬底上制备了外延SrRuO_3膜。膜结构通过四圆X射线衍射和电沉积来表征。薄膜结构通过4圆射线衍射进行表征，电学行为通过与温度相关的电阻率测量仪进行表征。随着沉积条件的变化，观察到结构和电性能的显着变化。当在有利于高能轰击的条件下沉积时，SrTiO_3上的SrRuO_3膜表现出面内和面外晶格常数的扩展和电阻率值的增加；另外，测量居里温度的降低。在不太苛刻的条件下沉积的SrRuO_3显示出的结构和特性与块状晶体相关的结构和特性更相似。

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