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首页> 外文会议>Symposium on Epitaxial Oxide Thin Films III March 31-April 2, 1997, San Francisco, California,U.S.A >Adsorption-controlled growth of ferroelectric PbTiO_3 and Bi_4Ti_3O_12 films for nonvolatile memory applications by MBE
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Adsorption-controlled growth of ferroelectric PbTiO_3 and Bi_4Ti_3O_12 films for nonvolatile memory applications by MBE

机译：MBE用于非易失性存储应用的铁电PbTiO_3和Bi_4Ti_3O_12膜的吸附控制生长

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摘要

Epitaxial PbTiO_3 and Bi_4Ti-3O_12 thin films have been grown on (100) SrTiO_3 and (100) LaAlO_3 substrates by reactive molecular beam epitaxy (MBE). Titanium is supplied to the film in the form of shuttered bursts each containing a one monolayer dose of titanium atoms for the growth of PbTiO_3 and three monolayers or the depositing film in the form of shuttered bursts each containing a one monolayer dose of titanium atoms for the growth of PbTiO_3 and three monolayers for the growth of Bi_4Ti_3O_12. Lead, bismuth, and ozone are continuously supplied to the surface of the depositing film. Growth of phase pure, c-axis oriented epitaxial films with bulk lattice constants is achieved using an overpressure of these volatile species. With the proper choice of substrate temperature (600 -650 deg C) and zone backgound pressure (P_O_3= 2x10~-5 Torr), the excess of the volatile metals and ozone desorb from the surface of the depositing film leaving a phase-pure stoichiometric crystal. The smooth PbTiO_3 surface morphology revealed by atomic force microscopy (AFM) suggests that the PbTiO_3 films grow in a layer-by-layer fashion. In contrast the Bi_4Ti_3O_12 films contain islands which evolve either continuously or around screw dislocations via a spiral-type growth mechanism.
机译：外延PbTiO_3和Bi_4Ti-3O_12薄膜已通过反应分子束外延（MBE）在（100）SrTiO_3和（100）LaAlO_3衬底上生长。钛以快门脉冲的形式提供给膜，每个快门脉冲包含一个单层剂量的钛原子用于PbTiO_3的生长和三个单层；或者以快门脉冲的形式提供的沉积膜，每个快门脉冲包含一个单层剂量的钛原子。 PbTiO_3的生长和Bi_4Ti_3O_12的三个单层生长。铅，铋和臭氧被连续地供应到沉积膜的表面。利用这些挥发性物质的超压，可以实现具有体晶格常数的纯c轴定向外延薄膜相的生长。通过适当选择衬底温度（600 -650摄氏度）和区域背压（P_O_3 = 2x10〜-5 Torr），过量的挥发性金属和臭氧会从沉积膜表面脱附，形成纯化学计量比水晶。原子力显微镜（AFM）揭示的光滑的PbTiO_3表面形态表明，PbTiO_3薄膜以逐层方式生长。相反，Bi_4Ti_3O_12膜包含岛，这些岛通过螺旋型生长机制连续或围绕螺旋位错演化。

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