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首页> 外文会议>Symposium on GaN and Related Alloys―2002 Dec 2-6, 2002 Boston, Massachusetts, U.S.A. >Subpicosecond Luminescence Studies of Carrier Dynamics in Nitride Semiconductors Grown Homoepitaxially By MBE On GaN Templates
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Subpicosecond Luminescence Studies of Carrier Dynamics in Nitride Semiconductors Grown Homoepitaxially By MBE On GaN Templates

机译：MBE在GaN模板上同质外延生长的氮化物半导体中载流子动力学的亚皮秒发光研究

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摘要

A new technique is presented that employs luminescence downconversion using an ultrashort gating pulse to enable the characterization of UV light emission from Ill-nitride semiconductors with subpicosecond temporal resolution. This technique also allows one to measure PL rise times and fast components of multiple decays in the subsequent time evolution of the PL intensity. Comparison of luminescence emission intensity and lifetime in GaN and AlGaN with ～0.1 Al content grown homoepitaxially on GaN templates with the same quantities measured in heteroepitaxial layers grown on sapphire indicate significant improvement in the homoepitaxial layers due to reduction in dislocation density. Fast (<15 ps) initial decays in the AlGaN are attributed to localization associated with alloy fluctuations and subsequent recombination through gap states.
机译：提出了一种新技术，该技术采用超短选通脉冲进行发光降频转换，从而能够以亚皮秒的时间分辨率表征来自III族氮化物半导体的紫外光。该技术还允许人们在PL强度的后续时间演变中测量PL上升时间和多个衰减的快速分量。比较在GaN模板上同质外延生长的GaN和AlGaN含量约为0.1的GaN和AlGaN中的发光强度和寿命，在蓝宝石上生长的异质外延层中测得的发光量和寿命相同，这表明由于位错密度的降低，同质外延层有了显着改善。 AlGaN中快速（<15 ps）的初始衰减归因于与合金涨落相关的局部化以及随后通过间隙态的重新结合。

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