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首页> 外文会议>Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A. >Dynamics of In As Quantum Dots Formation on AlAs and GaAs
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Dynamics of In As Quantum Dots Formation on AlAs and GaAs

机译：AlAs和GaAs上In As量子点形成的动力学

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摘要

We have studied the formation of InAs quantum dots (QDs) grown by molecular beam epitaxy on top of GaAs and 2 ML-thick AlAs layers in the temperature range from 350 to 500℃. In-situ reflection high energy electron diffraction (RHEED) patterns were recorded in real time during the growth and analyzed to characterize the 2D-to-3D transition on the surface, including QD formation, and ripening process. The kinetics of QD formation was studied using the InAs growth rates ranging from 0.01 to 1 ML/s and different ratios of As_2/In fluxes. RHEED patterns and ex-situ atomic force microscopy images were analyzed to reveal the development of sizes and shapes of the single-layer and stacked QD ensembles. The critical InAs coverage for QD formation was shown to be consistently higher for dots grown on the AlAs overlayer than for those grown on GaAs surface. Self-assembly of multilayer QD stacks revealed the reduction of the critical thickness for dots formed in the upper layers.
机译：我们研究了在350至500℃温度范围内，通过分子束外延在GaAs和2 ML厚的AlAs层上生长的InAs量子点（QD）的形成。在生长过程中实时记录原位反射高能电子衍射（RHEED）图案，并对其进行分析以表征表面上2D到3D的跃迁，包括QD的形成和成熟过程。使用0.01至1 ML / s的InAs生长速率和不同的As_2 / In通量比研究了QD形成的动力学。分析了RHEED图案和非原位原子力显微镜图像，以揭示单层和堆叠QD集成体的大小和形状的发展。结果表明，在AlAs覆盖层上生长的点比在GaAs表面生长的点对QD形成的关键InAs覆盖率始终更高。多层QD堆栈的自组装显示出在上层中形成的点的临界厚度减小了。

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