TiNi/GaAs Thin Film Structures for Gate Metallizations

机译：用于栅极金属化的TiNi / GaAs薄膜结构

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Shape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370℃. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

机译：已经研究了在GaAs上的形状记忆合金TiNi薄膜。最初将一系列TiNi组成的电子束沉积为Ga和Ti的多层薄层。 TiNi的金属间相是通过在370℃退火并完全混合多层而形成的。用X射线衍射技术研究了金属间相。为了使金属间相的薄层电阻最小化，进行了退火动力学和电阻率研究。 GaAs上的TiNi肖特基势垒已经制造出来，其性能将得到报道。使用能量色散光谱对其他表面形态进行的研究以及TEM研究表明，微观结构，金属间相形成和薄层电阻之间具有相关性。

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《Symposium on Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Structures, Nov 27-Dec 1, 2000, Boston, Massachusetts, U.S.A.》|2000年|p.11.31.1-11.31.4|共4页
会议地点 Boston MA(US);Boston MA(US)
作者
Chichang Zhang; Aris Christou;
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作者单位

Dept. Materials Science and Engineering, Univ. of Maryland at College Park College Park, Maryland, 20742 USA;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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TiNi/GaAs Thin Film Structures for Gate Metallizations

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