Reliability of Copper Metallization for CMOS ULSI Technologies

机译：用于CMOS ULSI技术的铜金属化的可靠性

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The electromigration characteristics of copper metallization which was deposited by chemical vapor deposition (CVD), physical vapor depositionor sputtering (PVD), and electroplating and then patterned by the damascene process are compared. The copper interconnect metallurgy was integrated with diffusion barriers to prevent copper diffusion into silicon dioxide interlevel dielectric. The mean time to fail (MTF) was found to be different depending on the deposition technique. This phenomenon is confirmed by the differences in thermal activation energies and grain size distributions of PVD, CVD, and electroplated copper.

机译：比较了通过化学气相沉积（CVD），物理气相沉积或溅射（PVD）和电镀，然后通过镶嵌工艺进行构图的铜金属镀层的电迁移特性。铜互连冶金学与扩散势垒集成在一起，以防止铜扩散到二氧化硅层间电介质中。发现平均失效时间（MTF）根据沉积技术而不同。 PVD，CVD和电镀铜的热活化能和晶粒尺寸分布的差异证实了这一现象。

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《Symposium on Interconnects and Contact Metallization for ULSI Oct 17-22, 1999, Honolulu, HI》|1999年|p.190-197|共8页
会议地点 Honolulu HI(US)
作者
H.S. Rathore; D. B. Nguyen; B. Agarwala; R.A. Wachnik; R.W Procter;
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IBM Microelectronics 1580 Route 52, East Fishkill Facility Hopewell Jct., NY 12533;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Reliability of Copper Metallization for CMOS ULSI Technologies

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